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DMN61D9UWQ-7

Part No DMN61D9UWQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 400MA SOT323
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 60 V 400mA (Ta) 440mW (Ta) Surface Mount SOT-323
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package SC-70, SOT-323
Case / Package SOT-323
Family Name DMN61
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869029-DMN61D9UWQ-7
Ultra Librarian 3D Model Ultra Librarian DMN61D9UWQ-7 CAD Model

Description

Introducing the DMN61D9UWQ-7 MOSFET from Diodes Incorporated

The DMN61D9UWQ-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to meet the rigorous requirements of modern electronic devices, providing efficient power management and switching capabilities.

Constructed with advanced trench technology, the DMN61D9UWQ-7 offers low on-resistance and a high continuous drain current of 6.3A, making it an excellent choice for high-efficiency power applications. Its compact SOT-323 package is optimized for space-constrained applications, while still delivering the thermal performance required for reliable operation.

Key Features of the DMN61D9UWQ-7:

  • Low On-Resistance: The device features an extremely low on-resistance of just 50 mΩ at V<sub>GS = 10V, minimizing conduction losses and improving overall efficiency.
  • High-Speed Switching: With fast switching speeds, this MOSFET is suitable for high-frequency applications, reducing switching losses and enhancing performance.
  • Thermal Stability: The DMN61D9UWQ-7 is designed to maintain its performance over a wide temperature range, ensuring reliability in various operating conditions.
  • Gate Charge Optimization: The optimized gate charge enables efficient switching performance, further reducing power losses and improving efficiency.
  • RoHS Compliant: Adhering to environmental standards, the DMN61D9UWQ-7 is RoHS compliant, making it suitable for use in green products and applications.

Whether you're designing power management circuits, DC-DC converters, or load switches, the DMN61D9UWQ-7 offers the performance and reliability needed to power your innovations. With its low threshold voltage and robust construction, it's particularly well-suited for portable and battery-powered devices, where power efficiency is critical.

Choose the DMN61D9UWQ-7 from Diodes Incorporated for your next project and experience the difference that a high-quality, high-performance MOSFET can make in your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1176 $50.5680
1,040+ $0.0965 $100.3600
1,605+ $0.0935 $150.0675
2,210+ $0.0905 $200.0050
2,860+ $0.0875 $250.2500
3,830+ $0.0784 $300.2720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,960 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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