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DMN62D1SFB-7B

Part No DMN62D1SFB-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 410MA 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 2.8nC @ 10V
Max Input Capacitance 80pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 470mW (Ta)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 40mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-DFN1006 (1.0x0.6)
Dimension 3-UFDFN
Win Source Part Number 1033799-DMN62D1SFB-7B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN62D1SFB-7B CAD Model

Description

Product Overview: DMN62D1SFB-7B

The DMN62D1SFB-7B is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) from Diodes Incorporated. This semiconductor device is designed to meet the stringent requirements of modern electronic circuits, offering a compact form factor and efficient power handling capabilities.

Key Features

  • Low On-Resistance: The DMN62D1SFB-7B boasts a low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits. This makes it an ideal choice for power management applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-speed applications, ensuring minimal delay in electronic signal processing.
  • Low Threshold Voltage: A low threshold voltage allows for the device to be easily turned on with a small gate voltage, making it compatible with low-voltage drive signals.
  • Surface-Mount Package: The DMN62D1SFB-7B comes in a space-saving SOT-23 package, which is well-suited for compact PCB layouts and high-density electronic designs.

Applications

The versatility of the DMN62D1SFB-7B MOSFET makes it an excellent choice for a wide range of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery-Powered Devices
  • Motor Control Systems
  • Load Switching
  • High-Speed Communication Devices

Product Specifications

The DMN62D1SFB-7B has a continuous drain current of 540 mA and a pulsed drain current of 1.5 A, making it capable of handling moderate power loads. The device's maximum power dissipation is 300 mW, which allows it to maintain stability and performance under various operating conditions. With a maximum junction temperature of 150°C, it can operate reliably in high-temperature environments.

Quality and Reliability

Diodes Incorporated is known for its commitment to quality and reliability, and the DMN62D1SFB-7B is no exception. It is manufactured using high-grade materials and state-of-the-art fabrication processes, ensuring that it meets the rigorous standards set by the industry. Customers can trust this MOSFET to deliver consistent performance and longevity in their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
895+ $0.0559 $50.0305
2,180+ $0.0459 $100.0620
3,375+ $0.0445 $150.1875
4,655+ $0.0430 $200.1650
6,010+ $0.0416 $250.0160
8,045+ $0.0373 $300.0785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,960 pieces
MOQ: 895 pcs
Order Increment : 1 pcs
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