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DMN63D8LDW

Part No DMN63D8LDW
Manufacturer Diodes Incorporated
Catalog Electronic Wholesale
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Diodes Incorporated
Manufacturer Homepage www.diodes.com
RoHS State Request Verification
Win Source Part Number 759284-DMN63D8LDW
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN63D8LDW CAD Model

Description

DMN63D8LDW - High-Performance MOSFET by Diodes Incorporated

The DMN63D8LDW is a cutting-edge N-channel enhancement mode MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to deliver efficient power management and is suitable for a wide range of applications, including power supplies, DC-DC converters, and load switches, among others.

Constructed with advanced trench technology, the DMN63D8LDW boasts a low on-resistance (RDS(on)), which translates into reduced conduction losses and improved overall efficiency. This feature makes it an ideal choice for energy-sensitive designs where power conservation is paramount. The device is capable of handling a continuous drain current (ID) of up to 6.3A, making it robust enough to support moderate to high power requirements.

With a maximum drain-source voltage (VDS) of 30V, the DMN63D8LDW offers a good balance between performance and reliability. It ensures that the device can operate effectively under various voltage conditions without compromising its lifespan or functionality. Additionally, the MOSFET has a low gate threshold voltage (VGS(th)), which allows for easy drive and control in low-voltage applications.

The DMN63D8LDW comes in a compact SOT-363 package, which is not only space-efficient but also provides excellent thermal performance. This small footprint is particularly beneficial for designers working on miniaturized electronic assemblies where board space is at a premium.

Key features of the DMN63D8LDW include:

  • Low on-resistance (RDS(on)) for improved efficiency
  • High continuous drain current (ID) of 6.3A
  • Maximum drain-source voltage (VDS) of 30V
  • Low gate threshold voltage (VGS(th)) for easy driving
  • Advanced trench MOSFET technology
  • Compact SOT-363 package for space-saving designs

Engineers and designers seeking a reliable and high-performance N-channel MOSFET will find the DMN63D8LDW from Diodes Incorporated to be an exceptional choice. Its combination of efficiency, power handling, and compact packaging makes it a versatile component for a plethora of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,115+ $0.0520 $57.9800
2,330+ $0.0497 $115.8010
3,660+ $0.0474 $173.4840
5,265+ $0.0439 $231.1335
6,760+ $0.0427 $288.6520
8,575+ $0.0404 $346.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 93,000 pieces
MOQ: 1220 pcs
Order Increment : 1 pcs
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