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DMN65D8LFB-7

Part No DMN65D8LFB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 260MA 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V
Power Dissipation (Max) 430mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X1-DFN1006-3
Package / Case 3-UFDFN
Base Product Number DMN65
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 585528-DMN65D8LFB-7
Ultra Librarian 3D Model Ultra Librarian DMN65D8LFB-7 CAD Model

Description

Product Overview: Diodes Incorporated DMN65D8LFB-7

The DMN65D8LFB-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power control and switching operations in a wide range of electronic applications.

Constructed using advanced trench MOSFET technology, the DMN65D8LFB-7 offers a low on-resistance and a high continuous drain current capability, making it an excellent choice for power management tasks. Its compact form factor, housed in a PowerDI3333-8 package, ensures a minimal footprint on the PCB, which is crucial for space-sensitive applications.

Key Features

      
  • Low On-Resistance: The device boasts a very low RDS(on), which translates to reduced conduction losses and improved overall efficiency in circuit operation.
  •   
  • High Continuous Drain Current: With the ability to handle a high continuous drain current (ID), this MOSFET can manage larger loads, making it suitable for high-power applications.
  •   
  • High-Speed Switching: The DMN65D8LFB-7 is optimized for fast switching speeds, which is essential for reducing switching losses and improving performance in applications such as DC-DC converters, motor drives, and power inverters.
  •   
  • PowerDI3333-8 Package: The compact package is designed for optimal thermal performance and space-saving on PCBs, which is particularly advantageous in portable and space-constrained designs.
  •   
  • RoHS Compliant: This product complies with the RoHS directive, which means it is free from hazardous substances, making it environmentally friendly and suitable for use in a wide range of consumer electronics.

Applications

The DMN65D8LFB-7 is versatile and can be used in various applications, including:

      
  • Power Management Circuits
  •   
  • DC-DC Converters
  •   
  • Battery Management Systems
  •   
  • Load Switches
  •   
  • Motor Control Circuits
  •   
  • Computing and Networking Systems

Diodes Incorporated's commitment to quality ensures that the DMN65D8LFB-7 is a reliable and efficient solution for designers looking to optimize their power control systems. Whether you're developing consumer electronics, automotive systems, or industrial equipment, this MOSFET is engineered to meet the stringent requirements of modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3327 $51.5685
325+ $0.3116 $101.2700
500+ $0.3011 $150.5500
715+ $0.2800 $200.2000
930+ $0.2695 $250.6350
1,160+ $0.2590 $300.4400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 220,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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