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DMNH6012SPSQ-13

Part No DMNH6012SPSQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1926 pF @ 30 V
Power Dissipation (Max) 1.6W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerDI5060-8
Package / Case 8-PowerTDFN
Base Product Number DMNH6012
Other Names DMNH6012SPSQ-13DICT,DMNH6012SPSQ-13DITR,DMNH6012SPSQ-13,DMNH6012SPSQ-13DIDKR
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278397-DMNH6012SPSQ-13
Ultra Librarian 3D Model Ultra Librarian DMNH6012SPSQ-13 CAD Model

Description

DMNH6012SPSQ-13 - N-Channel Enhancement Mode Field Effect Transistor by Diodes Incorporated

The DMNH6012SPSQ-13 is a high-performance, N-Channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated. This power transistor is a vital component in a wide range of electronic applications, offering efficiency and reliability for switching and amplification tasks.

Key Features:

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High-Speed Switching: With its capacity for high-speed switching, the DMNH6012SPSQ-13 is suitable for high-frequency applications, ensuring swift response times and improved performance.
  • Power Dissipation: It boasts a substantial power dissipation capability, allowing it to handle higher currents without compromising the integrity of the device.
  • Thermal Management: Advanced thermal management features are incorporated to ensure the device operates within safe temperature ranges, enhancing its longevity and reliability.
  • Low Threshold Voltage: The transistor is designed with a low threshold voltage, making it easier to drive the gate and activate the device even at lower voltages.
  • RoHS Compliant: In alignment with environmental standards, the DMNH6012SPSQ-13 is RoHS compliant, meaning it is free of hazardous substances such as lead, making it a more environmentally friendly option.

Applications:

The DMNH6012SPSQ-13 is versatile and can be deployed in various applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Motor Drives
  • Load Switches
  • Battery Management Systems
  • Computing and Server Applications

With its robust design, the DMNH6012SPSQ-13 from Diodes Incorporated is engineered to meet the stringent demands of modern electronic circuits. It provides designers with a reliable and efficient solution for controlling power in a compact form factor. Whether for industrial, commercial, or consumer electronics, the DMNH6012SPSQ-13 is an excellent choice for applications requiring high efficiency and fast switching capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8905 $53.4300
140+ $0.7307 $102.2980
215+ $0.7079 $152.1985
295+ $0.6850 $202.0750
380+ $0.6622 $251.6360
510+ $0.5937 $302.7870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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