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DMP10H4D2S-13

Part No DMP10H4D2S-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 270MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1196891-DMP10H4D2S-13
Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 4.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 10 V
Vgs (Max) ±20V
Ultra Librarian 3D Model Ultra Librarian DMP10H4D2S-13 CAD Model

Description

Introducing the DMP10H4D2S-13 P-Channel MOSFET from Diodes Incorporated

Diodes Incorporated presents the DMP10H4D2S-13, a high-performance P-Channel enhancement mode MOSFET that is a perfect solution for power management tasks in a wide array of electronic applications. This MOSFET is designed to offer efficient power switching with minimal losses, making it an ideal choice for engineers looking to optimize their power circuits.

The DMP10H4D2S-13 is housed in a compact SOT-23 package, which is not only space-saving but also ensures a low thermal resistance path for heat dissipation. This feature makes it suitable for high-density circuit designs where space is at a premium and thermal management is crucial.

Key Features:

  • Low On-Resistance: The device boasts a low on-resistance of typically 84 mΩ at VGS of -4.5V, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Threshold Voltage: With a threshold voltage (VGS(th)) of -0.45V to -1V, the DMP10H4D2S-13 ensures a reliable operation even in circuits with low gate drive voltages.
  • High Power Dissipation: The MOSFET is capable of dissipating up to 1.25W of power, allowing for robust performance in demanding situations.
  • Advanced Technology: Utilizing Diodes Incorporated's advanced trench technology, this MOSFET provides excellent performance with a low gate charge and low capacitance.

Applications:

The versatility of the DMP10H4D2S-13 makes it suitable for a variety of applications, including:

  • Power Management Circuits
  • Load Switching
  • Battery Management Systems
  • DC-DC Converters
  • Portable Devices

Whether you're designing power supplies, managing battery power, or looking to create efficient load switches, the DMP10H4D2S-13 provides the reliability and performance needed for modern electronic devices. Its excellent thermal performance, combined with a low on-resistance and high power dissipation, makes it a strong contender for any power-sensitive application.

For detailed specifications and application notes, visit the Diodes Incorporated website or consult the DMP10H4D2S-13 datasheet. Upgrade your designs with the efficiency and reliability of Diodes Incorporated's MOSFET technology.

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