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DMP2200UDW-13

Part No DMP2200UDW-13
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 0.9A SOT363 / DMP2160UFDBQ-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 900mA
Rds On (Maximum) at Id, Vgs 260mOhm at 880mA, 4.5V
Vgs(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 2.1nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 184pF at 10V
Power - Max 450mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Manufacturer Pack Quantity 10,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 801494-DMP2200UDW-13
Ultra Librarian 3D Model Ultra Librarian DMP2200UDW-13 CAD Model

Description

The DMP2200UDW-13 is a robust, high-performance P-channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is part of Diodes Incorporated's extensive portfolio of semiconductor solutions, which are known for their reliability and efficiency in a wide range of electronic applications.

With its ultra-small surface-mount package, the DMP2200UDW-13 is perfect for space-constrained applications. The device features dual P-channel MOSFETs with a common drain configuration, making it ideal for applications requiring a compact, high-density power management solution. The product offers a continuous drain current (I<sub>D) of -1.8 A and a pulsed drain current (I<sub>DM) of -7.2 A, ensuring reliable performance for high-power applications.

The DMP2200UDW-13 boasts a low threshold voltage (V<sub>GS(th)) of -0.45 V, which allows for efficient operation at lower gate voltages. This characteristic is particularly beneficial for battery-powered devices, where power conservation is critical. Moreover, the MOSFET has a low on-resistance (R<sub>DS(on)) of 260 mΩ at V<sub>GS = -4.5 V, which translates to reduced conduction losses and improved overall efficiency.

The device's advanced trench technology provides enhanced performance characteristics, including fast switching speeds, which are essential for high-frequency applications. Additionally, the DMP2200UDW-13 features built-in ESD protection, safeguarding the device from electrostatic discharges that could otherwise cause damage to the sensitive semiconductor material.

Diodes Incorporated has designed the DMP2200UDW-13 with thermal management in mind. The MOSFET operates within a junction temperature range of -55°C to +150°C, ensuring stable performance across various environmental conditions. Its RoHS compliance reflects the company's commitment to environmental sustainability by eliminating hazardous substances from its products.

Whether it's for power management in portable electronics, load switching, or other applications where high efficiency and space-saving are required, the DMP2200UDW-13 from Diodes Incorporated represents a reliable and high-quality choice for designers and engineers.

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Pricing & Ordering

Quantity Unit Price Ext. Price
470+ $0.1072 $50.3840
1,000+ $0.1004 $100.4000
1,550+ $0.0970 $150.3500
2,220+ $0.0902 $200.2440
2,885+ $0.0868 $250.4180
3,595+ $0.0835 $300.1825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 470 pcs
Order Increment : 1 pcs
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