The DMPH6050SK3-13 is a high-performance, surface-mount, N-channel enhancement mode MOSFET from Diodes Incorporated, designed to deliver efficient power management and conversion in a compact form factor. This device is a testament to Diodes Incorporated's commitment to providing state-of-the-art solutions for modern electronic applications.
Key Features
- High Current Capability: The DMPH6050SK3-13 is capable of handling continuous drain currents up to 60A, making it suitable for high-power applications.
- Low On-Resistance: With a low R<sub>DS(on) of typically 3.5mΩ at V<sub>GS = 10V, this MOSFET ensures minimal power loss and higher efficiency in electronic circuits.
- PowerDI®5060-8 Package: The device comes in a proprietary PowerDI®5060-8 package that combines excellent thermal performance with a small footprint, enabling compact and efficient designs.
- High-Speed Switching: Designed for fast switching applications, the DMPH6050SK3-13 provides rapid response times, contributing to improved performance in power conversion systems.
Applications
The versatility of the DMPH6050SK3-13 allows it to be used in a wide range of applications, including:
- DC/DC Converters
- Power Supply Units (PSUs)
- Motor Drives
- Computing Systems
- Telecommunication Equipment
Technical Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DSS)
60V
Continuous Drain Current (I<sub>D)
60A
Pulsed Drain Current (I<sub>DM)
240A
Power Dissipation (P<sub>D)
88W
Operating Temperature Range
-55°C to +150°C
With its robust construction and advanced technology, the DMPH6050SK3-13 is an excellent choice for designers looking to enhance power efficiency and performance in their next-generation electronic designs.