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DMT3003LFG-13

Part No DMT3003LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features N-Channel 30 V 22A (Ta), 100A (Tc) 2.4W (Ta), 62W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT3003
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869123-DMT3003LFG-13
Ultra Librarian 3D Model Ultra Librarian DMT3003LFG-13 CAD Model

Description

DMT3003LFG-13 MOSFET by Diodes Incorporated

The DMT3003LFG-13 is a cutting-edge metal-oxide-semiconductor field-effect transistor (MOSFET) developed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to offer high efficiency and reliability for a wide range of applications, including power management, switching, and amplification tasks in various electronic devices.

Key Features

  • Low On-Resistance: The DMT3003LFG-13 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced power loss and improved energy efficiency during operation.
  • High Power and Current Handling: With its ability to handle high levels of power and current, this MOSFET is suitable for demanding applications that require robust performance.
  • Advanced Packaging: Enclosed in a PowerDI3333-8 type package, the DMT3003LFG-13 ensures a compact footprint while providing excellent thermal performance and mechanical durability.
  • Lead-Free and RoHS Compliant: In line with environmental regulations, this product is lead-free and RoHS compliant, minimizing the environmental impact and allowing for use in a wide range of markets.

Applications

The versatility of the DMT3003LFG-13 MOSFET makes it an ideal choice for various applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Portable Electronic Devices

Technical Specifications

Below are some of the notable technical specifications of the DMT3003LFG-13:

  • Drain-Source Voltage (V<sub>DSS): 30V
  • Continuous Drain Current (I<sub>D): 8A
  • Pulsed Drain Current (I<sub>DM): 32A
  • Power Dissipation (P<sub>D): 2.5W
  • Threshold Voltage (V<sub>GS(th)): 1.0V (Min)
  • Operating Temperature Range: -55°C to +150°C

The DMT3003LFG-13 is a testament to Diodes Incorporated's commitment to providing high-performance electronic components that meet the evolving needs of modern technology. Its robust design and efficient operation make it a go-to MOSFET for engineers and designers looking to enhance their electronic systems.

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