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DMT3020LSD-13

Part No DMT3020LSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 25V-30V SO-8 T&R 2
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 44 Weeks
Features Mosfet Array 2 N-Channel (Dual) 30V 16A (Tc) 1W (Ta) Surface Mount 8-SO
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SO
Family Name DMT3020
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869135-DMT3020LSD-13
Ultra Librarian 3D Model Ultra Librarian DMT3020LSD-13 CAD Model

Description

DMT3020LSD-13 - Dual N-Channel MOSFET by Diodes Incorporated

The DMT3020LSD-13 is a high-performance, dual N-Channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This semiconductor device is specifically engineered to deliver efficient power management and signal switching in a wide range of electronic applications. With its compact footprint and low on-resistance, the DMT3020LSD-13 is an ideal choice for power-intensive and space-constrained applications.

Key Features

  • Low On-Resistance: The device features low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), allowing it to handle significant power levels for its size.
  • Advanced Packaging: The DMT3020LSD-13 comes in a space-saving 8-pin SO-8 package, which is suitable for compact PCB layouts.
  • Dual N-Channel Configuration: Its dual N-Channel configuration enables the design of more compact circuitry by integrating two independent MOSFETs into a single package.
  • Fast Switching Speed: The device exhibits fast switching characteristics, making it suitable for high-frequency applications.
  • Low Threshold Voltage: With a low gate threshold voltage (V<sub>GS(th)), this MOSFET can be easily driven by low-voltage logic circuits.

Applications

The DMT3020LSD-13 is versatile and can be used in various applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor control systems
  • Battery management systems
  • Load switches
  • Power management for portable devices

Quality and Reliability

Diodes Incorporated ensures that the DMT3020LSD-13 meets stringent quality and reliability standards. The device is subjected to rigorous testing and validation to guarantee optimal performance in diverse conditions.

Conclusion

With its combination of efficiency, power handling, compact packaging, and fast switching capabilities, the DMT3020LSD-13 from Diodes Incorporated stands out as a highly reliable component for modern electronic designs. Whether you are developing power supplies, portable devices, or any other application that requires efficient power management, the DMT3020LSD-13 is an excellent choice to streamline your design while maintaining high performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2516 $57.8680
560+ $0.2065 $115.6400
870+ $0.2000 $174.0000
1,195+ $0.1936 $231.3520
1,545+ $0.1871 $289.0695
2,070+ $0.1677 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,690 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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