ON Semiconductor FDB9406L-F085 - PowerTrench® MOSFET

The ON Semiconductor FDB9406L-F085 is a state-of-the-art PowerTrench® MOSFET designed to deliver high performance in power switching applications. This device is a part of ON Semiconductor's portfolio of low-voltage, high-efficiency power MOSFETs that are engineered to minimize on-state resistance and provide superior switching performance.

This MOSFET features a robust and durable design with an R<sub>DS(on) of just 3.3 mΩ at V<sub>GS = 10 V, which ensures low conduction losses and enhances overall efficiency. The FDB9406L-F085 is capable of handling continuous drain currents up to 40 A, making it suitable for high-power applications such as DC/DC converters, motor drives, and power management systems.

The device's PowerTrench® technology is tailored to reduce gate charge (Q<sub>g), which translates to faster switching speeds and reduced power losses during the switching phase. This makes the FDB9406L-F085 an excellent choice for high-frequency applications where efficiency is paramount.

The FDB9406L-F085 comes in a TO-263 (D2PAK) package, which is known for its excellent thermal characteristics, ensuring the MOSFET operates reliably even under high-temperature conditions. The package is also designed for easy mounting on a printed circuit board (PCB), facilitating the design and manufacturing process for engineers.

Key features of the FDB9406L-F085 include:

• Low R<sub>DS(on) to minimize conduction losses
• High continuous drain current (I<sub>D) rating of 40 A
• PowerTrench® technology for reduced gate charge and fast switching
• TO-263 (D2PAK) package for superior thermal performance
• 100% avalanche tested for reliability and performance integrity

With its combination of low on-state resistance, high current handling capability, and fast switching performance, the ON Semiconductor FDB9406L-F085 PowerTrench® MOSFET is an ideal solution for designers who require a high-efficiency, reliable MOSFET for their power management and conversion applications.