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DMT6004SCT

Part No DMT6004SCT
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 100A (Tc) 2.3W (Ta), 113W (Tc) Through Hole TO-220-3
Manufacturer Diodes Incorporated
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220-3
Family Name DMT6004
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869140-DMT6004SCT
Ultra Librarian 3D Model Ultra Librarian DMT6004SCT CAD Model

Description

DMT6004SCT - N-Channel MOSFET from Diodes Incorporated

The DMT6004SCT is a high-performance N-Channel enhancement mode Field Effect Transistor (FET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This device is particularly well-suited for a variety of applications, ranging from power management solutions to load switching. Its compact and efficient design ensures reliable operation in a wide array of electronic products.

Key Features:

  • Low On-Resistance: The DMT6004SCT boasts an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency and reduces power losses during operation, making it an energy-saving choice for power-sensitive applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant levels of current, making it suitable for high-power applications.
  • Advanced Packaging: The device is housed in a RoHS-compliant, halogen-free, and Green Device compatible package, reflecting Diodes Incorporated's commitment to environmental sustainability.
  • Thermal Management: The DMT6004SCT is designed with superior thermal performance in mind, ensuring that the device remains cool under heavy loads, which is critical for maintaining longevity and reliability.
  • Fast Switching Speed: This MOSFET features fast switching capabilities, which is beneficial for applications requiring high-speed power switching and contributes to the reduction of switching losses.

Applications:

  • DC/DC Converters
  • Power Management Systems
  • Battery Powered Devices
  • Load Switching
  • Motor Drives

The DMT6004SCT is engineered to meet the stringent demands of modern electronics, offering a combination of low on-resistance, high current capacity, and fast switching speeds. Its robust design and advanced packaging technology make it a versatile component for designers looking to enhance the performance and efficiency of their power management systems. Whether it's integrated into consumer electronics, industrial machinery, or automotive applications, the DMT6004SCT by Diodes Incorporated is an exceptional choice for those in need of a reliable and high-performance N-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.2970 $50.4900
360+ $0.2782 $100.1520
560+ $0.2688 $150.5280
800+ $0.2500 $200.0000
1,040+ $0.2406 $250.2240
1,300+ $0.2312 $300.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,190 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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