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DMT8012LK3-13

Part No DMT8012LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 44A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 44 Weeks
Features N-Channel 80 V 44A (Tc) 2.7W (Ta) Surface Mount TO-252-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package TO-252-3
Family Name DMT8012
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMT8012LK3-13DITR, DMT8012LK3-13DICT, DMT8012LK3-13DIDKR
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869165-DMT8012LK3-13
Ultra Librarian 3D Model Ultra Librarian DMT8012LK3-13 CAD Model

Description

DMT8012LK3-13 - A High-Performance MOSFET from Diodes Incorporated

The DMT8012LK3-13 is a cutting-edge metal-oxide-semiconductor field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This particular MOSFET is part of Diodes Incorporated's extensive portfolio of power management devices, which are engineered to deliver efficiency and reliability for a broad range of applications.

This product is a surface-mount, N-channel enhancement mode MOSFET that comes in a compact and robust DFN2020-6 (Type D) package. The DMT8012LK3-13 is designed for optimal power efficiency and control, making it an ideal choice for power conversion and switching applications. With its low on-resistance and high continuous drain current, this MOSFET is capable of handling high-density power designs with ease.

The DMT8012LK3-13 boasts impressive electrical characteristics. It operates with a drain-source voltage (V<sub>DS) of 30V, and provides a continuous drain current (I<sub>D) of 8A, ensuring that it can support a wide range of power requirements. Additionally, its low threshold voltage (V<sub>GS(th)) allows for efficient operation at lower gate voltages, which is beneficial for battery-operated devices and low-voltage circuits.

One of the key features of the DMT8012LK3-13 is its low on-resistance (R<sub>DS(on)), which minimizes power losses and improves overall system efficiency. This characteristic, combined with its fast switching speed, makes it an excellent choice for high-performance power management in applications such as DC-DC converters, power supplies, motor drives, and other electronic devices that demand high efficiency and reliability.

Furthermore, the DMT8012LK3-13 is RoHS-compliant, reflecting Diodes Incorporated's commitment to environmental sustainability. The device's halogen-free and lead-free design ensures that it meets the latest environmental standards and regulations, making it suitable for eco-friendly products and systems.

In summary, the DMT8012LK3-13 from Diodes Incorporated represents a superior solution for designers looking to optimize power management in their electronic systems. Its high efficiency, robust performance, and compact form factor make it a versatile component for a wide range of high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9454 $51.9970
130+ $0.7757 $100.8410
200+ $0.7515 $150.3000
280+ $0.7272 $203.6160
360+ $0.7030 $253.0800
480+ $0.6303 $302.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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