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DMT8012LPS-13

Part No DMT8012LPS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 9A/65A PWRDI5060
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1949 pF @ 40 V
Power Dissipation (Max) 2.1W (Ta), 113W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI5060-8
Package / Case 8-PowerTDFN
Base Product Number DMT8012
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 585625-DMT8012LPS-13
Ultra Librarian 3D Model Ultra Librarian DMT8012LPS-13 CAD Model

Description

Introducing the DMT8012LPS-13 MOSFET from Diodes Incorporated

The DMT8012LPS-13 is a state-of-the-art, P-channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This advanced MOSFET is designed to provide efficient power management and switching with low on-resistance and minimal power loss, making it an ideal choice for a wide range of applications.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The DMT8012LPS-13 offers exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Power Dissipation: With its ability to dissipate high levels of power, this MOSFET can handle significant current without overheating, ensuring reliability and longevity in demanding situations.
  • Advanced Packaging: Packaged in a RoHS-compliant, environmentally friendly PowerDI3333-8 package, the DMT8012LPS-13 is designed for optimal thermal performance and a compact footprint on PCBs.
  • Voltage and Current Ratings: This device supports a drain-source voltage (V<sub>DS) of -12V and a continuous drain current (I<sub>D) of -8A, catering to a broad spectrum of power requirements.
  • Fast Switching Speed: The fast switching capabilities of the DMT8012LPS-13 make it suitable for high-speed circuitry, contributing to efficient operation and reduced switching losses.

Applications

The versatility of the DMT8012LPS-13 allows it to be used in various applications, including but not limited to:

  • Power management systems
  • Load switches
  • Battery protection circuits
  • DC-DC converters
  • Portable devices

Quality and Reliability

Diodes Incorporated is committed to delivering products of the highest quality and reliability. The DMT8012LPS-13 is no exception, undergoing rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry. With its robust design and superior performance, the DMT8012LPS-13 is the go-to choice for designers looking for a high-performance P-channel MOSFET.

For detailed specifications, application notes, and additional resources, visit the Diodes Incorporated website or contact your local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5016 $50.1600
245+ $0.4116 $100.8420
380+ $0.3987 $151.5060
520+ $0.3859 $200.6680
675+ $0.3730 $251.7750
900+ $0.3344 $300.9600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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