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DMTH6016LFVWQ-7

Part No DMTH6016LFVWQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 41A POWERDI3333 / N-Channel 60 V 41A (Tc) 1.17W (Ta) Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 939 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.17W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerDI3333-8 (SWP) Type UX
Package / Case 8-PowerVDFN
Base Product Number DMTH6016
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353253-DMTH6016LFVWQ-7
Ultra Librarian 3D Model Ultra Librarian DMTH6016LFVWQ-7 CAD Model

Description

DMTH6016LFVWQ-7 Power MOSFET by Diodes Incorporated

The DMTH6016LFVWQ-7 is a high-performance Power MOSFET presented by Diodes Incorporated, renowned for its efficiency and reliability in a wide range of applications. This Power MOSFET is specifically designed to meet the rigorous demands of modern electronic devices, providing a compact and energy-efficient solution for power management tasks.

Key Features:

  • Device Type: Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)
  • Configuration: Single N-Channel
  • Drain-Source Voltage (V<sub>DS): 60V, offering a robust breakdown voltage suitable for various applications.
  • Continuous Drain Current (I<sub>D): 32A, ensuring high current handling capability for heavy-duty operations.
  • R<sub>DS(on): Very low on-resistance of 8.5mΩ (max) at V<sub>GS = 10V, which minimizes power loss and improves efficiency.
  • Gate-Source Voltage (V<sub>GS): ±20V
  • Power Dissipation (P<sub>D): 48W, providing a good balance between power handling and thermal management.
  • Operating Temperature Range: -55°C to +150°C, allowing for use in extreme environmental conditions.
  • Package: PowerDI5060-8 Type C, which offers a compact footprint and is designed for optimal thermal performance.

The DMTH6016LFVWQ-7 is a testament to Diodes Incorporated's commitment to providing high-quality, durable components. It features advanced trench MOSFET technology, which enables the device to achieve a lower gate charge and reduced switching losses, making it ideal for high-speed switching applications. This makes the DMTH6016LFVWQ-7 an excellent choice for power supplies, DC-DC converters, motor drives, and other power-intensive applications.

Furthermore, the product is RoHS compliant, ensuring that it meets the latest environmental standards and is free from hazardous materials. With its robust design and advanced features, the DMTH6016LFVWQ-7 is engineered to enhance performance, reduce energy consumption, and extend the operational life of electronic systems.

For designers and engineers looking for a reliable and efficient power management solution, the DMTH6016LFVWQ-7 from Diodes Incorporated offers the perfect blend of performance, durability, and energy efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5705 $51.3450
215+ $0.4681 $100.6415
335+ $0.4535 $151.9225
460+ $0.4389 $201.8940
590+ $0.4242 $250.2780
790+ $0.3803 $300.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 102,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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