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DMTH8012LK3-13

Part No DMTH8012LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 50A TO252 / N-Channel 80 V 50A (Tc) 2.6W (Ta) Surface Mount TO-252-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1949 pF @ 40 V
Power Dissipation (Max) 2.6W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package TO-252-3
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number DMTH8012
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMTH8012LK3-13DICT,DMTH8012LK3-13DITR,DMTH8012LK3-13DI,DMTH8012LK3-13DIDKR
Standard Package 2,500
Win Source Part Number 1324648-DMTH8012LK3-13
Ultra Librarian 3D Model Ultra Librarian DMTH8012LK3-13 CAD Model

Description

DMTH8012LK3-13 - A High-Efficiency Power MOSFET from Diodes Incorporated

The DMTH8012LK3-13 is a state-of-the-art power MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This particular MOSFET is designed to cater to the demanding requirements of modern electronic applications, offering high efficiency, reliability, and performance.

Key Features

  • Low On-Resistance: The DMTH8012LK3-13 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved overall efficiency. This feature is crucial for applications that require high current handling with minimal power loss.
  • High Power Density: With its compact and robust design, this MOSFET is capable of delivering high power density, making it ideal for space-constrained applications that require a small footprint without compromising on power.
  • Advanced Packaging: Utilizing the PowerDI5060-8 package, the DMTH8012LK3-13 ensures excellent thermal performance and a lower profile than traditional packages. This advanced packaging contributes to better heat dissipation and allows for higher current handling capabilities.
  • High Threshold Voltage: The device is characterized by a high threshold voltage, ensuring that it remains off under small voltage fluctuations, which provides a level of protection against unintended turn-ons.

Applications

The DMTH8012LK3-13 is versatile and can be used in a wide range of applications, including but not limited to:

  • Power management circuits
  • DC/DC converters
  • Motor drives
  • Battery management systems
  • Computing and server applications
  • Telecommunications

Specifications at a Glance

The DMTH8012LK3-13 operates with a drain-source voltage (V<sub>DS) of 80V, which allows it to handle high voltage applications with ease. It also features a continuous drain current (I<sub>D) of 125A at 25°C, making it capable of driving high current loads. The device's power dissipation (P<sub>D) is rated at 88W, ensuring that it can manage significant power levels.

With its combination of high performance, efficiency, and reliability, the DMTH8012LK3-13 from Diodes Incorporated is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6225 $59.1375
230+ $0.5109 $117.5070
355+ $0.4950 $175.7250
485+ $0.4790 $232.3150
625+ $0.4629 $289.3125
835+ $0.4151 $346.6085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,580 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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