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DN0150BLP4-7B

Part No DN0150BLP4-7B
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.1A DFN1006H4-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor 50 V 100 mA 450 mW
Manufacturer Diodes Incorporated
Package Reel - TR
Part Status Obsolete
Family Name DN0150
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number DN0150BLP47B, DN0150BLP4-7BDICT, DN0150BLP4-7BDITR, DN0150BLP4-7BDIDKR
Quantity per package 10000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 852138-DN0150BLP4-7B
Ultra Librarian 3D Model Ultra Librarian DN0150BLP4-7B CAD Model

Description

Diodes Incorporated DN0150BLP4-7B - High-Performance MOSFET

The DN0150BLP4-7B is a state-of-the-art N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency and power density applications. This product is part of Diodes Incorporated's extensive range of power management devices, which are renowned for their reliability and performance.

Key Features:

  • Low On-Resistance: The DN0150BLP4-7B boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved overall efficiency in power conversion applications.
  • High-Speed Switching: Engineered for fast switching capabilities, this MOSFET is ideal for high-frequency power switching applications, offering reduced switching losses and enhanced power efficiency.
  • PowerDI®3333-8 Package: Encased in the compact and thermally efficient PowerDI®3333-8 package, the DN0150BLP4-7B is designed for space-constrained applications while providing excellent power dissipation and thermal performance.
  • Low Threshold Voltage: The device features a low threshold voltage, ensuring it can be driven at lower gate voltages, which is beneficial for low voltage applications and helps in minimizing power usage.

Applications:

The DN0150BLP4-7B is versatile and can be utilized in a wide array of applications, including but not limited to:

  • DC/DC Converters
  • Power Management Functions
  • Load Switches
  • Battery Management Systems
  • Motor Drives

Product Specifications:

This MOSFET operates with a continuous drain current of up to 5.6 A, making it suitable for handling moderate power loads. The device can withstand drain-source voltages up to 150V, providing ample headroom for various electronic applications. The DN0150BLP4-7B is also characterized by a low gate charge, which enhances its switching performance and reduces power losses.

Diodes Incorporated's commitment to quality ensures that the DN0150BLP4-7B MOSFET meets the highest industry standards for performance and reliability. Whether you're designing power supplies or optimizing power efficiency in electronic devices, the DN0150BLP4-7B is an excellent choice for your circuit design needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2501 $58.7735
565+ $0.2053 $115.9945
875+ $0.1988 $173.9500
1,205+ $0.1924 $231.8420
1,555+ $0.1860 $289.2300
2,080+ $0.1668 $346.9440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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