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DP0150BDJ-7

Part No DP0150BDJ-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 50V 0.1A SOT963 / Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 100mA 80MHz 300mW Surface Mount SOT-963
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Obsolete
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 80MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-963
Supplier Device Package SOT-963
Base Product Number DP0150
Standard Package 10,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1340798-DP0150BDJ-7
Ultra Librarian 3D Model Ultra Librarian DP0150BDJ-7 CAD Model

Description

Product Overview: DP0150BDJ-7 - Diodes Incorporated

The DP0150BDJ-7 is a high-performance, precision P-Channel MOSFET from Diodes Incorporated, designed to meet the needs of a variety of applications that require efficient power management and control. This MOSFET is part of Diodes Incorporated's extensive portfolio of semiconductor products that emphasize reliability and innovation.

Key Features:

  • Low On-Resistance: The DP0150BDJ-7 features a low on-resistance (R<sub>DS(on)), which minimizes power loss and improves overall efficiency, making it suitable for power-sensitive applications.
  • High Power Dissipation: With an impressive power dissipation capability, this MOSFET can handle higher currents and operate at higher temperatures, ensuring robust performance under demanding conditions.
  • Small Package Size: Enclosed in a compact DFN1006-3 package, the DP0150BDJ-7 is ideal for space-constrained applications, allowing designers to save valuable board space without sacrificing performance.
  • Low Threshold Voltage: The device operates at a low threshold voltage, which ensures that it can be controlled with lower gate drive voltages, thus compatible with low-voltage logic circuits.
  • ESD Protected: This MOSFET comes with built-in electrostatic discharge (ESD) protection, enhancing the reliability of the device by preventing damage due to unexpected voltage spikes.

Applications:

The DP0150BDJ-7 is versatile and can be used in various applications, including but not limited to:

  • Power management circuits
  • Battery-powered devices
  • Load switches
  • Portable electronics
  • DC-DC converters
  • Power distribution systems

Quality and Reliability:

Diodes Incorporated is committed to providing high-quality products. The DP0150BDJ-7 is manufactured with stringent quality control processes and is designed to meet or exceed industry standards for performance and reliability. Customers can trust this MOSFET to deliver consistent and dependable results in their electronic designs.

With its combination of efficiency, compact size, and robust performance, the DP0150BDJ-7 is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1517 $58.4045
930+ $0.1245 $115.7850
1,440+ $0.1206 $173.6640
1,985+ $0.1167 $231.6495
2,560+ $0.1129 $289.0240
3,425+ $0.1012 $346.6100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,046 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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