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DP0150BLP4-7

Part No DP0150BLP4-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.1A DFN1006H4
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 450mW
Frequency - Transition 80MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1006-3
Win Source Part Number 1033925-DP0150BLP4-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DP0150BLP4-7 CAD Model

Description

Product Overview: DP0150BLP4-7 - Diodes Incorporated

The DP0150BLP4-7 from Diodes Incorporated is a high-performance, low-power P-Channel MOSFET designed to deliver efficient power management in a compact package. This device is ideal for a wide range of applications, including load switching, power management, and battery protection circuits.

Key Features

  • Low On-Resistance: The DP0150BLP4-7 boasts a low on-resistance, which minimizes power loss and improves overall efficiency, making it suitable for battery-powered devices where power conservation is critical.
  • High Power Dissipation: With an ability to dissipate high amounts of power, this MOSFET can handle significant current without overheating, ensuring reliability and longevity in demanding situations.
  • Small Footprint: Housed in a compact X2-DFN1006-3 package, the DP0150BLP4-7 saves valuable board space, which is essential for modern, space-constrained electronic designs.
  • Low Threshold Voltage: The device features a low threshold voltage that allows for operation at lower gate voltages, expanding its compatibility with various control logic levels.
  • ESD Protected: Built-in electrostatic discharge (ESD) protection shields the DP0150BLP4-7 from sudden voltage spikes, contributing to the robustness of the end application.

Applications

The versatility of the DP0150BLP4-7 makes it suitable for a variety of applications, including:

  • Power management modules
  • Battery-powered devices
  • Load switch circuits
  • Portable electronics
  • Smartphones and tablets

Technical Specifications

The DP0150BLP4-7 features a drain-source voltage (V<sub>DS) of -20V and a continuous drain current (I<sub>D) of -1.5A. Its power dissipation (P<sub>D) is rated at 0.8W, and it operates over a junction temperature range of -55°C to +150°C, making it reliable in a wide range of environmental conditions.

For designers and engineers looking for a P-Channel MOSFET that offers both efficiency and space-saving characteristics, the DP0150BLP4-7 from Diodes Incorporated stands out as a robust and versatile choice. Its low on-resistance, high power dissipation, and compact form factor make it an excellent component for power-sensitive and space-limited applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
480+ $0.1044 $50.1120
1,170+ $0.0857 $100.2690
1,810+ $0.0830 $150.2300
2,490+ $0.0804 $200.1960
3,220+ $0.0777 $250.1940
4,315+ $0.0696 $300.3240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 174,000 pieces
MOQ: 480 pcs
Order Increment : 1 pcs
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