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FMMT624TC

Part No FMMT624TC
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 125V 1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 125V
Max Vce (sat) 250mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 300 @ 200mA, 10V
Maximum Power Dissipation 625mW
Frequency - Transition 155MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 1039180-FMMT624TC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FMMT624TC CAD Model

Description

Introducing the FMMT624TC Transistor from Diodes Incorporated

The FMMT624TC is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This particular transistor is part of their extensive range of products tailored to meet the needs of modern electronic circuits, offering a balanced combination of features that enhance its applicability across various industries.

With its compact SOT23 package, the FMMT624TC is engineered to deliver efficient power handling and switching capabilities while maintaining a small footprint on printed circuit boards (PCBs). This makes it an excellent choice for space-constrained applications where performance cannot be compromised. The SOT23 package also provides advantages in thermal management, ensuring reliable operation even under high current conditions.

The FMMT624TC boasts an impressive collector-emitter voltage (Vceo) of 400V, which allows it to handle higher voltage applications with ease. Its continuous collector current (Ic) rating of 500mA is suitable for a wide range of driving and amplification tasks. Additionally, the device features a low collector-emitter saturation voltage (Vcesat), which translates to reduced power loss and improved efficiency in switching applications.

One of the key attributes of the FMMT624TC is its high gain bandwidth product (fT), which provides excellent frequency response, making it well-suited for amplification in RF and high-speed signal processing applications. Its fast switching times are ideal for digital and switching circuits, ensuring minimal delay and high-speed operation.

Diodes Incorporated has designed the FMMT624TC with reliability in mind. It is characterized by its robustness against thermal and electrical stresses, which is critical for maintaining performance over the product's lifespan. The device is also RoHS compliant, reflecting the company's commitment to environmental sustainability.

In summary, the FMMT624TC from Diodes Incorporated is a versatile and reliable transistor that offers a powerful blend of voltage handling, current capacity, speed, and efficiency, all packed into a small SOT23 package. It is well-suited for a variety of applications, including power management, signal amplification, and high-frequency switching, making it a valuable component in the design of advanced electronic systems.

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