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FMMTA13TA

Part No FMMTA13TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 40V 0.3A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 300mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 900mV @ 100μA, 100mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 10000 @ 100mA, 5V
Maximum Power Dissipation 330mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 016352-FMMTA13TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FMMTA13TA CAD Model

Description

Introducing the FMMTA13TA NPN Transistor from Diodes Incorporated

The FMMTA13TA is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This transistor is part of Diodes Incorporated's broad range of discrete, analog, and mixed-signal components that cater to a wide variety of applications across multiple industries.

With its compact SOT-23 package, the FMMTA13TA is optimized for surface-mount technology (SMT), allowing for efficient assembly and space-saving design in electronic circuits. The small form factor does not compromise its electrical performance, making it an excellent choice for designers looking to balance size and functionality.

The FMMTA13TA boasts impressive electrical characteristics that make it suitable for high-speed switching applications. It features a collector-emitter voltage (Vceo) of 30V, which ensures reliable operation even under moderate voltage stresses. The collector current (Ic) rating of 1A allows for handling of significant current loads, making it robust for various power applications.

Moreover, this transistor offers a gain bandwidth product (fT) of 100MHz, which indicates its ability to operate efficiently at high frequencies. This makes the FMMTA13TA an ideal choice for RF signal amplification and fast-switching applications in telecommunications, consumer electronics, and industrial automation systems.

The device also exhibits a low collector-emitter saturation voltage (Vcesat), which translates into reduced power dissipation and improved energy efficiency during operation. This feature is particularly beneficial in battery-powered devices, where energy conservation is crucial.

In summary, the FMMTA13TA from Diodes Incorporated is a versatile and efficient NPN transistor that offers a balance of compact size, high-speed performance, and energy efficiency. Its compatibility with SMT and robust electrical specifications make it a go-to choice for engineers and designers working on cutting-edge electronics that require reliable and high-performance discrete components.

For detailed specifications, application notes, and additional resources, visit the Diodes Incorporated website or contact their support team for technical assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,670+ $0.0347 $57.9490
4,170+ $0.0277 $115.5090
6,250+ $0.0277 $173.1250
8,700+ $0.0266 $231.4200
11,365+ $0.0254 $288.6710
15,000+ $0.0231 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,030 pieces
MOQ: 1670 pcs
Order Increment : 1 pcs
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