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FZT658TA

Part No FZT658TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 400V 0.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 400V 0.5A SOT-223
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 400V
Max Vce (sat) 500mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 200mA, 10V
Maximum Power Dissipation 2W
Frequency - Transition 50MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 016607-FZT658TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name FZT658
Introduction Date October 28, 1997
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian FZT658TA CAD Model

Description

Introducing the FZT658TA Transistor from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the FZT658TA, a high-performance NPN bipolar junction transistor (BJT) designed for a multitude of applications requiring high efficiency and reliability. This versatile component is a perfect choice for designers looking to optimize their electronic circuits with a transistor that offers both power and precision.

The FZT658TA is characterized by its high current gain-bandwidth product and low saturation voltage, making it an excellent choice for high-speed switching applications. Its robust design is encapsulated in an SOT-223 package, which not only ensures a compact footprint but also provides superior thermal performance, allowing it to handle higher currents without overheating.

Key Features of the FZT658TA:

  • Transistor Polarity: NPN
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector Current (IC): 3A
  • Power Dissipation (Pd): 2W
  • DC Current Gain (hFE): 40 to 400
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: SOT-223

With a collector-emitter voltage of 400V and a collector current of up to 3A, the FZT658TA is capable of driving high-power circuits while maintaining a low saturation voltage, which translates to reduced power loss and improved overall efficiency. This feature is particularly useful in power regulation systems, motor control circuits, and lighting applications.

Additionally, the FZT658TA offers a broad operating temperature range, making it suitable for use in challenging environments. Whether it's deployed in industrial machinery or consumer electronics, this transistor maintains its performance across a wide spectrum of temperatures.

Diodes Incorporated has ensured that the FZT658TA meets the highest quality standards, with rigorous testing procedures in place to guarantee functionality and durability. For engineers and designers seeking a reliable transistor that can deliver high performance in a compact form factor, the FZT658TA from Diodes Incorporated stands out as an exceptional choice.

For detailed specifications, application notes, and additional resources, please visit the Diodes Incorporated website or contact their support team for further assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4762 $50.0010
260+ $0.3907 $101.5820
400+ $0.3785 $151.4000
550+ $0.3663 $201.4650
710+ $0.3541 $251.4110
945+ $0.3175 $300.0375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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