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MMBT3906Q-7-F

Part No MMBT3906Q-7-F
Manufacturer Diodes Incorporated
Catalog RF Transistors (BJT)
Description GENERAL PURPOSE TRANSISTOR SOT23  /  Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 310 mW Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 310 mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
ECCN EAR99
HTSUS 8541.21.0075
Other Names 31-MMBT3906Q-7-FTR
Standard Package 3,000
Win Source Part Number 1079406-MMBT3906Q-7-F
Ultra Librarian 3D Model Ultra Librarian MMBT3906Q-7-F CAD Model

Description

Diodes Incorporated MMBT3906Q-7-F PNP Transistor

The MMBT3906Q-7-F is a high-quality PNP bipolar junction transistor (BJT) from Diodes Incorporated, designed for general-purpose amplifier and switching applications. This surface-mount transistor is part of the extensive range of semiconductor components that Diodes Incorporated offers, which are renowned for their reliability and performance.

Key Features:

  • Device Type: PNP transistor which is suitable for use in a variety of electronic circuits.
  • Package: Comes in a compact SOT-23 package, which is widely used in the industry and is suitable for automated assembly processes.
  • Collector-Emitter Voltage (Vceo): Capable of withstanding up to -40V, providing a good margin for typical low to medium voltage applications.
  • Collector Current (Ic): It can handle a continuous collector current of up to -200mA, making it suitable for driving small loads.
  • Power Dissipation: With a power dissipation of 300mW, it can handle moderate levels of power in compact electronic designs.
  • DC Current Gain (hFE): Features a high DC current gain, typically between 100 and 300, which is beneficial for amplification purposes.
  • Compliance: Meets the RoHS and Green standards, ensuring that it is manufactured without the use of hazardous substances and is environmentally friendly.

Applications:

The MMBT3906Q-7-F is versatile and can be utilized in a broad range of applications, including but not limited to:

  • Signal amplification in audio and other low-power applications.
  • Switching applications in consumer electronics.
  • Load drivers in portable battery-operated devices.
  • Control circuits in embedded systems.
  • Linear amplification stages in communication devices.

Diodes Incorporated's MMBT3906Q-7-F is an excellent choice for designers looking for a general-purpose PNP transistor that offers a blend of performance, efficiency, and compact packaging. Its SOT-23 form factor makes it ideal for space-constrained applications while providing the necessary electrical characteristics for a wide array of electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,910+ $0.0262 $50.0420
4,070+ $0.0246 $100.1220
6,305+ $0.0238 $150.0590
9,050+ $0.0221 $200.0050
11,740+ $0.0213 $250.0620
14,710+ $0.0204 $300.0840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,670 pieces
MOQ: 1910 pcs
Order Increment : 1 pcs
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