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MMBT4403-7-F

Part No MMBT4403-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.6A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 300mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023766-MMBT4403-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMBT4403-7-F CAD Model

Description

Product Overview: MMBT4403-7-F from Diodes Incorporated

The MMBT4403-7-F is a high-quality PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated, a leading company in the semiconductor industry. This transistor is designed for general-purpose amplifier and switching applications, providing users with a reliable and efficient electronic component for a wide range of electronic circuits.

Key Features

  • Type: PNP BJT
  • Package: SOT-23 surface mount
  • Collector-Emitter Voltage (Vceo): 40V
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 100 to 300 at 10mA Vce
  • Operating Temperature Range: -55°C to +150°C
  • RoHS Compliant: Yes

The MMBT4403-7-F is encapsulated in a small SOT-23 package, making it suitable for high-density PCB designs. It is capable of handling a collector current of up to 600mA, which makes it suitable for moderate power applications. With a collector-emitter voltage rating of 40V, it can be used in circuits with relatively high voltage requirements.

The device boasts a power dissipation of 350mW, allowing it to handle a fair amount of power without the need for additional heat sinking in most applications. Its DC current gain (hFE) is specified to be between 100 and 300 at a collector-emitter voltage of 10mA, indicating good amplification characteristics for a variety of signal processing tasks.

The MMBT4403-7-F operates over a wide temperature range from -55°C to +150°C, ensuring stable performance under extreme conditions. This feature makes it an excellent choice for industrial and automotive applications where temperature fluctuations are common.

As a RoHS-compliant product, the MMBT4403-7-F meets the environmental standards that restrict the use of hazardous substances in electronic equipment. This commitment to environmental safety makes it suitable for use in a variety of consumer and commercial products that are marketed globally.

In conclusion, the MMBT4403-7-F from Diodes Incorporated is a versatile and efficient PNP transistor that offers designers a compact, high-performance solution for amplification and switching needs in a variety of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,750+ $0.0286 $50.0500
3,735+ $0.0268 $100.0980
5,795+ $0.0259 $150.0905
8,335+ $0.0240 $200.0400
10,825+ $0.0231 $250.0575
13,515+ $0.0222 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 693,000 pieces
MOQ: 1750 pcs
Order Increment : 1 pcs
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