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MMBT5401-7-F

Part No MMBT5401-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 150V 0.6A SMD SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 60 @ 10mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 023775-MMBT5401-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMBT5401-7-F CAD Model

Description

MMBT5401-7-F PNP Transistor by Diodes Incorporated

The MMBT5401-7-F is a high-quality PNP bipolar junction transistor (BJT) manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This particular transistor is designed for general-purpose amplifier and switching applications, making it a versatile component for a wide range of electronic circuits.

Key Features

  • Transistor Polarity: PNP - This indicates that the majority charge carriers are holes, making it suitable for positive signal amplification.
  • Collector-Emitter Voltage (Vceo): 150V - This is the maximum voltage the transistor can withstand between the collector and emitter when the base is open.
  • Collector Current (Ic): 600mA - The maximum continuous current that can flow from the collector to the emitter.
  • Power Dissipation (Pd): 350mW - The amount of power the transistor can dissipate without damage, ensuring reliability and longevity.
  • DC Current Gain (hFE): 100 to 300 - This is the gain or amplification factor of the transistor, indicating its efficiency in amplifying a signal.
  • Package / Case: SOT-23-3 - A compact, surface-mount package that allows for high-density mounting and is suitable for automated assembly processes.

Product Applications

The MMBT5401-7-F is ideal for incorporation into a variety of electronic devices. Its typical applications include, but are not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in high-fidelity amplifiers and radios
  • Switching operations in consumer electronics
  • Power management in portable devices
  • Linear amplification and switching in industrial control systems

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet stringent industry standards. The MMBT5401-7-F is produced with the company's advanced semiconductor manufacturing technology, ensuring high reliability and performance. It is RoHS compliant, minimizing the environmental impact by excluding hazardous substances from its manufacturing process.

With its robust design and versatile applications, the MMBT5401-7-F is an excellent choice for designers and engineers looking for a reliable PNP transistor for their next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,965+ $0.0255 $50.1075
4,785+ $0.0209 $100.0065
7,390+ $0.0203 $150.0170
10,205+ $0.0196 $200.0180
13,160+ $0.0190 $250.0400
17,650+ $0.0170 $300.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,000 pieces
MOQ: 1965 pcs
Order Increment : 1 pcs
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