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MMBTA55-7

Part No MMBTA55-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | TRANS PNP 60V 0.5A SOT23-3
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Tape (CT)
Transistor Type PNP
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 250mV at 10mA, 100mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 100mA, 1V
Maximum Power 300mW
Frequency - Transition 50MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Family Part Number MMBTA55
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1225024-MMBTA55-7
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian MMBTA55-7 CAD Model

Description

The MMBTA55-7 is a high-performance PNP bipolar junction transistor (BJT) from Diodes Incorporated, designed to suit a wide range of applications that require efficient amplification and switching. This transistor is a testament to Diodes Incorporated's commitment to providing industry-leading components that blend quality with high functionality.

Key Features:

  • Device Type: PNP transistor, which makes it ideal for use in positive ground configurations and for providing a current control to loads from a positive voltage source.
  • Configuration: Single, offering straightforward integration into various circuit designs without the complexity of multi-transistor configurations.
  • Collector-Emitter Voltage (VCEO): The MMBTA55-7 has a VCEO of -80V, which allows it to handle substantial voltage levels without risk of breakdown.
  • Collector Current (IC): It can sustain a continuous collector current of up to -500mA, making it suitable for moderate power applications.
  • Power Dissipation (Pd): With a power dissipation of 350mW, this transistor can effectively dissipate the heat generated during operation, ensuring stability and longevity.
  • DC Current Gain (hFE): It features a high DC current gain, ranging from 100 to 300, which allows a small base current to control a larger collector current effectively.
  • Package: The MMBTA55-7 comes in a small surface-mount SOT-23 package, which is ideal for space-constrained applications and allows for high-density mounting on PCBs.

Applications:

The MMBTA55-7 is versatile enough to be used in a variety of electronic circuits, including but not limited to:

  • Signal amplification in audio and radio frequency (RF) applications
  • Power management circuits
  • Switching loads in embedded systems
  • Driver stages in amplifiers and regulators

Quality and Reliability:

Diodes Incorporated ensures that the MMBTA55-7 meets the highest quality and reliability standards. Each transistor undergoes rigorous testing and quality control procedures to guarantee performance even in the most demanding conditions. Whether for commercial or industrial use, the MMBTA55-7 is a reliable choice for designers seeking a robust PNP transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
510+ $0.1143 $58.2930
1,220+ $0.0947 $115.5340
1,900+ $0.0912 $173.2800
2,600+ $0.0889 $231.1400
3,380+ $0.0855 $288.9900
4,550+ $0.0762 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 510 pcs
Order Increment : 1 pcs
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