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MMDT2227M-7

Part No MMDT2227M-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V/60V 0.6A SOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V, 60V
Max Vce (sat) 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Collector Cut-off Current(Max) 10nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 10V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz, 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Win Source Part Number 121694-MMDT2227M-7
Ultra Librarian 3D Model Ultra Librarian MMDT2227M-7 CAD Model

Description

Introducing the MMDT2227M-7 - A High-Performance Dual NPN Transistor from Diodes Incorporated

The MMDT2227M-7 is a cutting-edge dual NPN (Negative-Positive-Negative) transistor developed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This small signal transistor is designed for surface mount applications, offering a compact solution for a variety of electronic circuits.

With its dual NPN configuration, the MMDT2227M-7 is perfect for applications requiring matched transistor pairs. This feature is particularly beneficial for differential signal processing applications where precision and consistency are crucial. The device comes in an ultra-small molded plastic SOT-26 package, which not only saves valuable board space but also ensures a low profile in the end application.

Key features of the MMDT2227M-7 include a continuous collector current of up to 600 mA for each transistor, which allows it to handle moderate levels of current with ease. The device also boasts a collector-emitter voltage (Vceo) of 40V, providing a good margin for voltage spikes and surges commonly found in electronic circuits. Additionally, the collector-base voltage (Vcbo) is rated at 40V, and the emitter-base voltage (Vebo) is 5V, ensuring stable operation under various conditions.

The MMDT2227M-7's power dissipation is another highlight, with each transistor capable of dissipating up to 300 mW. This ensures that the device can operate effectively without overheating, even when subjected to continuous operation or high ambient temperatures. Furthermore, the transistor has a transition frequency (fT) of 100 MHz, which makes it suitable for high-speed switching and amplification applications.

Diodes Incorporated has designed the MMDT2227M-7 with a focus on reliability and performance. The device is RoHS compliant, reflecting the company's commitment to environmental sustainability. Whether you are designing amplifiers, switches, or any other circuit that requires a high-performance dual NPN transistor, the MMDT2227M-7 is an excellent choice that combines functionality, efficiency, and compactness in one package.

For detailed specifications and application notes, designers and engineers are encouraged to consult the datasheet provided by Diodes Incorporated. The MMDT2227M-7 is not just a component; it's a robust solution that can elevate the performance of your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4662 $51.3170
85+ $1.2031 $102.2635
130+ $1.1655 $151.5150
180+ $1.1279 $203.0220
230+ $1.0903 $250.7690
310+ $0.9775 $303.0250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,603 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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