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MMDT3946-7R-F

Part No MMDT3946-7R-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description GENERAL PURPOSE TRANSISTOR SOT36 / Bipolar (BJT) Transistor Array NPN, PNP Complementary 40V 200mA 300MHz, 250MHz 200mW Surface Mount SOT-363
Datasheet
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Transistor Type NPN, PNP Complementary
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 200mW
Frequency - Transition 300MHz, 250MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
ECCN EAR99
HTSUS 8541.21.0075
Other Names 31-MMDT3946-7R-FTR
Standard Package 3,000
Win Source Part Number 959752-MMDT3946-7R-F
Ultra Librarian 3D Model Ultra Librarian MMDT3946-7R-F CAD Model

Description

The MMDT3946-7R-F from Diodes Incorporated is a high-performance, dual NPN and PNP small-signal surface mount transistor, housed in a compact SOT-363 package. This versatile device is designed to meet the stringent requirements of today's fast-paced electronic industry, offering both space-saving and power efficiency for a wide range of applications.

Key Features

  • Dual Configuration: This component integrates one NPN and one PNP transistor in a single package, making it ideal for applications where board space is at a premium.
  • High Power Dissipation: Capable of dissipating 150mW of power, the MMDT3946-7R-F can handle moderate power applications with ease.
  • Collector Current: It supports a collector current of 200mA for both transistors, ensuring reliable performance in high-demand situations.
  • Low Collector-Emitter Saturation Voltage: This feature provides better efficiency in switching applications, reducing power losses during operation.
  • High Gain Bandwidth Product: With a transition frequency of 250MHz for the NPN and 200MHz for the PNP transistor, this device is suitable for high-frequency applications.

Applications

The MMDT3946-7R-F is designed for use in a variety of circuits and can be applied in:

  • Switching and Amplification Circuits
  • Power Management Solutions
  • Signal Processing
  • Consumer Electronics
  • Telecommunications
  • Portable Devices

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the MMDT3946-7R-F is no exception. It is manufactured to meet the highest industry standards, ensuring both reliability and durability for the end-user. With its low on-state resistance and robust thermal performance, this transistor is designed to last in the most demanding of environments.

Environmental Compliance

The MMDT3946-7R-F is RoHS compliant and lead-free, reflecting Diodes Incorporated's dedication to environmental responsibility. Customers can be assured that they are choosing a product that meets current environmental legislation for electronic components.

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