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MMDT4146-7-F

Part No MMDT4146-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 25V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz, 250MHz
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 023915-MMDT4146-7-F
Ultra Librarian 3D Model Ultra Librarian MMDT4146-7-F CAD Model

Description

Product Overview: MMDT4146-7-F from Diodes Incorporated

The MMDT4146-7-F is a state-of-the-art dual NPN small signal surface mount transistor designed and manufactured by Diodes Incorporated, a leading global provider and manufacturer of high-quality semiconductor products. This product is specifically engineered to cater to a broad range of applications requiring high efficiency and reliability.

Key Features

  • Package: The MMDT4146-7-F comes in a compact SOT-26 package, which is ideal for space-constrained applications. Its surface-mount design allows for efficient assembly in high-volume production.
  • Dual Transistor Configuration: This component integrates two NPN transistors, providing a convenient solution for designs that require matched transistor pairs, thus simplifying circuit layout and reducing board space.
  • Electrical Characteristics: Each transistor in the MMDT4146-7-F offers excellent hFE linearity and is characterized by a collector-emitter voltage (Vceo) of 40V, collector current (Ic) of up to 200mA, and a maximum power dissipation (Pd) of 300mW, ensuring suitability for a wide range of signal amplification tasks.
  • Low Saturation Voltage: The device is optimized for low saturation voltage, which enhances overall energy efficiency by minimizing power loss during operation.
  • High-Speed Switching: Designed for high-speed switching applications, the MMDT4146-7-F provides fast switching times, making it an excellent choice for digital switching circuits.

Applications

The versatility of the MMDT4146-7-F allows it to be used in various applications, including but not limited to:

  • Signal processing
  • Amplification circuits
  • Switching regulators
  • Power management systems
  • Consumer electronics
  • Telecommunications

Quality and Reliability

Diodes Incorporated is committed to delivering products of the highest quality and reliability. The MMDT4146-7-F is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets industry standards and customer expectations. Its RoHS compliance also guarantees that it adheres to environmental regulations, making it a responsible choice for eco-friendly designs.

Overall, the MMDT4146-7-F is an excellent choice for designers looking for a dual NPN transistor that offers compactness, efficiency, and high performance. Its robust design and versatile applications make it a valuable component in any electronic system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
775+ $0.0748 $57.9700
1,885+ $0.0614 $115.7390
2,915+ $0.0595 $173.4425
4,020+ $0.0575 $231.1500
5,190+ $0.0557 $289.0830
6,945+ $0.0499 $346.5555
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,640 pieces
MOQ: 775 pcs
Order Increment : 1 pcs
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