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MMDT5451-7-F

Part No MMDT5451-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description Trans GP BJT NPN/PNP 160V 0.2A 200mW 6-Pin SOT-363 T/R / TRANS NPN/PNP 160V/150V SOT363
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 160V, 150V
Max Vce (sat) 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 10mA, 5V / 60 @ 10mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 059216-MMDT5451-7-F
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name MMDT5451
Introduction Date October 12, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian MMDT5451-7-F CAD Model

Description

The MMDT5451-7-F from Diodes Incorporated is a high-performance dual PNP transistor designed for a variety of applications that require small signal amplification. This component is a part of the broad range of bipolar transistors offered by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products.

Key Features:

  • Transistor Type: Dual PNP - The MMDT5451-7-F contains two PNP transistors in a single package, providing matched pair performance that is ideal for applications requiring closely matched transistor parameters.
  • Package: SOT-363 - This small surface-mount package is designed for space-saving on PCBs, making it suitable for compact electronic designs.
  • Collector-Emitter Voltage (Vceo): 180V - The high collector-emitter voltage rating enables this transistor to be used in circuits with higher operating voltages, providing versatility in its applications.
  • Collector Current (Ic): 100mA - The MMDT5451-7-F can handle a moderate amount of current, making it suitable for a range of signal amplification tasks.
  • Power Dissipation (Pd): 200mW - With a power dissipation of 200 milliwatts, this device can manage a fair amount of power for its size.
  • DC Current Gain (hFE): 120 - 240 at 10mA - The transistor provides a good current gain, ensuring efficient amplification of the input signal.
  • Operating Temperature Range: -55°C to +150°C - The wide operating temperature range ensures reliability and performance under varying environmental conditions.
  • RoHS Compliant: Yes - The MMDT5451-7-F meets the requirements of the Restriction of Hazardous Substances Directive, making it suitable for use in environmentally sensitive applications.

Whether you're designing audio amplifiers, signal processing circuits, or need a reliable switch, the MMDT5451-7-F offers the performance and reliability that engineers have come to expect from Diodes Incorporated. Its dual PNP configuration and compact footprint make it an excellent choice for space-constrained applications where efficiency and component matching are crucial.

For detailed specifications, application notes, and additional resources, please refer to the official Diodes Incorporated datasheets and product documentation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4399 $50.5885
280+ $0.3610 $101.0800
430+ $0.3497 $150.3710
595+ $0.3384 $201.3480
765+ $0.3271 $250.2315
1,025+ $0.2933 $300.6325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 76,205 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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