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MMDTA42-7-F

Part No MMDTA42-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 300V 0.5A SOT26
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 30mA, 10V
Maximum Power Dissipation 300mW
Frequency - Transition 50MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Win Source Part Number 104724-MMDTA42-7-F
Ultra Librarian 3D Model Ultra Librarian MMDTA42-7-F CAD Model

Description

Introducing the MMDTA42-7-F High Voltage Transistor from Diodes Incorporated

The MMDTA42-7-F is a robust NPN high voltage transistor designed and manufactured by Diodes Incorporated, a leading global provider and manufacturer of high-quality semiconductor products. This transistor is a part of their expansive range of discrete and analog semiconductors, engineered to meet the rigorous demands of electronic applications across various industries.

Key Features

  • High Voltage Capability: The MMDTA42-7-F is capable of handling high voltages, making it suitable for applications that require voltage regulation and switching at elevated levels.
  • Surface Mount Package: Enclosed in an SOT-23 package, this transistor is designed for surface mounting, which allows for a compact footprint on printed circuit boards and is ideal for automated assembly processes.
  • Low Saturation Voltage: It offers low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation.
  • High Current Gain Bandwidth Product: With a high transition frequency, the MMDTA42-7-F provides excellent performance in high-speed switching applications.

Applications

The MMDTA42-7-F is versatile and can be used in a wide array of applications, including but not limited to:

  • Switching regulators
  • Power management devices
  • Motor control circuits
  • Inverters
  • Signal amplification

Product Specifications

Some of the critical specifications of the MMDTA42-7-F include:

  • Collector-Emitter Voltage (V<sub>CEO): 300V
  • Collector-Base Voltage (V<sub>CBO): 300V
  • Emitter-Base Voltage (V<sub>EBO): 5V
  • Continuous Collector Current (I<sub>C): 500mA
  • Power Dissipation (P<sub>D): 225mW
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

With its exceptional performance and reliability, the MMDTA42-7-F is an excellent choice for designers and engineers looking for a high voltage transistor solution. Diodes Incorporated ensures that this product, like all their offerings, meets the highest standards of quality and performance.

Ordering and Availability

The MMDTA42-7-F is available through Diodes Incorporated and its authorized distributors. For detailed product information, datasheets, and ordering options, please visit the Diodes Incorporated website or contact their customer service team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1310 $50.4350
935+ $0.1075 $100.5125
1,440+ $0.1042 $150.0480
1,985+ $0.1008 $200.0880
2,570+ $0.0974 $250.3180
3,435+ $0.0874 $300.2190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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