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ZDT6757TA

Part No ZDT6757TA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 300V 0.5A SM8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN, PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 50 @ 100mA, 5V
Maximum Power Dissipation 2.75W
Frequency - Transition 30MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SM8
Win Source Part Number 1119981-ZDT6757TA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZDT6757TA CAD Model

Description

Introducing the ZDT6757TA from Diodes Incorporated

The ZDT6757TA is a high-performance, dual P-channel enhancement mode Field Effect Transistor (FET) designed by the trusted semiconductor manufacturer, Diodes Incorporated. This advanced MOSFET is engineered to deliver efficient power management and signal processing in a compact SOT-223 package, making it an ideal choice for space-constrained applications.

With its dual P-channel configuration, the ZDT6757TA offers designers the flexibility to implement complex circuit topologies while reducing component count and simplifying board layout. Its low on-resistance (R<sub>DS(on)) ensures minimal voltage drop and power loss, which is critical for maintaining energy efficiency in power-sensitive designs.

The device features a continuous drain current (I<sub>D) rating that supports robust current handling capabilities, making it suitable for a wide range of applications, including but not limited to power management circuits, battery-powered devices, load switches, and power amplification stages.

Key Specifications:

  • Voltage Rating: The ZDT6757TA operates at a maximum drain-source voltage (V<sub>DS) that is suitable for most low to medium voltage applications.
  • Current Handling: It provides a substantial continuous drain current (I<sub>D), allowing it to handle typical power loads with ease.
  • Low R<sub>DS(on): The device boasts an impressively low on-resistance, translating to higher efficiency and lower heat generation.
  • Thermal Performance: Enhanced thermal characteristics ensure reliable operation even under elevated temperatures, contributing to the longevity of the product.
  • Package: Housed in a SOT-223 package, the ZDT6757TA offers a balance between thermal performance and compactness, making it suitable for PCBs where space is at a premium.

The ZDT6757TA is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of modern electronics. With its combination of efficiency, power handling, and compact form factor, it stands out as a versatile component that can power your next innovative project.

Whether you're designing power management systems, portable electronics, or any application requiring efficient P-channel MOSFETs, the ZDT6757TA is a reliable and effective choice that won't disappoint.

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