The ZTX658 from Diodes Incorporated is a high-performance bipolar transistor that is specifically designed for applications requiring high current and high voltage operation. This NPN silicon planar medium power transistor is renowned for its reliability and efficiency, making it an ideal choice for a wide range of electronic circuits.

Key Features

• Voltage Capabilities: The ZTX658 can handle a collector-base voltage (VCBO) of up to 400V, ensuring it can be used in circuits with high voltage requirements.
• Current Handling: With a continuous collector current (IC) of 1A, this transistor can manage significant current, making it suitable for power regulation and switching applications.
• Power Dissipation: It has a power dissipation (PD) of 1.25W, which helps in maintaining stability and performance by effectively dissipating the heat generated during operation.
• Gain Bandwidth Product: The ZTX658 boasts a transition frequency (fT) of 100MHz, providing a good frequency response for amplification purposes.
• HFE Classification: The device features high DC current gain (hFE) with a minimum value of 40, ensuring efficient amplification in a variety of circuit configurations.

Applications

The ZTX658 is versatile and can be used in various applications, including:

• Switching regulators
• Power amplifiers
• Motor control circuits
• High voltage inverters
• Audio equipment

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The ZTX658 is no exception and has been rigorously tested to meet stringent industry standards for performance and reliability. It is available in a TO-92 package, which is widely accepted for through-hole mounting, making it easy to integrate into existing designs.

Environmental Compliance

The ZTX658 is also RoHS compliant, ensuring that it meets the latest environmental standards, minimizing the use of hazardous substances in electronics.