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ZVN4525E6TA

Part No ZVN4525E6TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 230MA SOT-23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.4V, 10V
Gate-Source Threshold Voltage 1.8V @ 1mA
Max Gate Charge 3.65nC @ 10V
Max Input Capacitance 72pF @ 25V
Maximum Gate-Source Voltage ±40V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 8.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-6
Dimension SOT-23-6
Win Source Part Number 036845-ZVN4525E6TA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZVN4525E6TA CAD Model

Description

Product Overview: ZVN4525E6TA by Diodes Incorporated

The ZVN4525E6TA is a high-performance, N-channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This device is specifically engineered to deliver efficient power management and control within a compact SOT-23 package, making it an ideal choice for space-constrained applications.

Key Features

  • Voltage and Current: The ZVN4525E6TA operates with a drain-source voltage (V<sub>DS) of 250V, which is suitable for high-voltage applications. It also has a continuous drain current (I<sub>D) of 230mA, making it capable of handling moderate levels of power.
  • Low On-Resistance: This MOSFET features a low on-state resistance (R<sub>DS(on)) of 7.5Ω at V<sub>GS = 10V, which enhances its efficiency by minimizing power losses during operation.
  • Fast Switching Speed: With its fast switching capabilities, the ZVN4525E6TA provides improved performance for high-speed circuitry, contributing to the overall responsiveness and efficiency of the system.
  • Thermal Performance: The device's power dissipation is rated at 1.25W, which, combined with its thermal resistance, ensures stable operation even under higher temperatures.

Applications

The versatility of the ZVN4525E6TA allows it to be utilized in a wide array of applications, including:

  • Power management circuits
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Load/relay drivers
  • High-voltage switching applications

Reliability and Compliance

Diodes Incorporated ensures that the ZVN4525E6TA meets the highest quality and reliability standards. This MOSFET is compliant with RoHS regulations, meaning it is manufactured without the use of hazardous substances. Additionally, it is characterized for operation from -55°C to +150°C, providing a wide temperature range that suits various environmental conditions.

In summary, the ZVN4525E6TA from Diodes Incorporated is a robust and reliable component that offers a balance of high voltage capability, efficient power management, and fast switching in a small form factor. Its combination of features makes it an excellent choice for designers looking to optimize their power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9845 $59.0700
140+ $0.8077 $113.0780
215+ $0.7825 $168.2375
300+ $0.7573 $227.1900
385+ $0.7320 $281.8200
515+ $0.6563 $337.9945
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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