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ZVNL110GTA

Part No ZVNL110GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 600MA SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Input Capacitance 75pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120320-ZVNL110GTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVNL110GTA CAD Model

Description

The ZVNL110GTA is a high-performance, low-threshold N-channel enhancement-mode MOSFET manufactured by Diodes Incorporated. This device is designed to deliver efficient power control and switching applications in a compact SOT-223 package. With its advanced technology, the ZVNL110GTA provides an optimal solution for a wide range of applications, including power management, load switching, and motor control.

Key Features

  • Low On-Resistance: The ZVNL110GTA boasts an extremely low on-resistance, which enhances its efficiency by minimizing power loss during operation.
  • Low Threshold Voltage: This MOSFET operates at a low threshold voltage, making it suitable for low-voltage applications and ensuring that it can be driven by logic-level voltages.
  • High-Speed Switching: Designed for fast switching applications, the ZVNL110GTA can switch on and off rapidly, which is crucial for high-frequency circuits.
  • High Continuous Drain Current: The device supports a high continuous drain current, providing robust performance for high-power applications.

Applications

The versatility of the ZVNL110GTA allows it to be employed in a variety of applications. It is commonly used in:

  • Power management systems
  • DC/DC converters
  • Battery powered devices
  • Motor control circuits
  • Load switching

Specifications

Parameter Value Package SOT-223 Threshold Voltage (Typical) 1.0V Drain-Source Voltage (Vds) 100V Continuous Drain Current (Id) 500mA On-Resistance (Rds on) 5 Ohm

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The ZVNL110GTA MOSFET is produced with rigorous quality control processes to ensure reliability and performance in all applications. It is also supported by Diodes Incorporated's technical expertise and customer service.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7463 $52.3890
70+ $1.4329 $100.3030
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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