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ZXM62P02E6TA

Part No ZXM62P02E6TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.3A SOT23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 5.8nC @ 4.5V
Max Input Capacitance 320pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-6
Dimension SOT-23-6
Win Source Part Number 036920-ZXM62P02E6TA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXM62P02E6TA CAD Model

Description

Introducing the ZXM62P02E6TA - A High-Performance P-Channel MOSFET

The ZXM62P02E6TA is a cutting-edge P-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This MOSFET is tailored for power management tasks and is a perfect fit for a wide range of applications, including switch-mode power supplies, power management functions, and various types of switching circuits.

Key Features of ZXM62P02E6TA

  • Low On-Resistance: The device boasts a low on-resistance, which translates to reduced power loss and improved efficiency in applications where it is deployed.
  • High Power Dissipation: With an ability to handle a significant amount of power, the ZXM62P02E6TA can sustain higher currents, making it suitable for demanding power applications.
  • Advanced Packaging: Encased in a small SOT-23 package, the MOSFET is designed for space-constrained applications while providing excellent thermal performance.
  • Voltage Rating: This MOSFET operates at a drain-source voltage of -20V, which is ideal for many low-voltage applications.
  • Gate Threshold Voltage: It features a gate threshold voltage that ensures low-voltage operation, enabling its use in battery-operated devices and other portable applications.

Applications

The versatility of the ZXM62P02E6TA allows it to be used in various applications, including:

  • Power management circuits
  • Load switches
  • Battery-operated devices
  • DC-DC converters
  • Motor control systems

Reliability and Performance

Diodes Incorporated has designed the ZXM62P02E6TA to meet the high reliability and performance standards required in today's electronic devices. The device's robustness is further enhanced by its high input impedance and fast switching capabilities, ensuring that it not only meets but exceeds the expectations of engineers and designers seeking high-performance components for their power management solutions.

With its comprehensive set of features, the ZXM62P02E6TA stands out as a superior choice for those looking to optimize their power management systems with a reliable, efficient, and compact P-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3818 $51.5430
320+ $0.3133 $100.2560
495+ $0.3035 $150.2325
685+ $0.2937 $201.1845
885+ $0.2840 $251.3400
1,180+ $0.2546 $300.4280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,357 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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