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ZXM62P03GTA

Part No ZXM62P03GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.9A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.9A (Ta), 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10.2nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120365-ZXM62P03GTA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian ZXM62P03GTA CAD Model

Description

The ZXM62P03GTA is a high-performance P-channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and switching with its advanced features and robust specifications, making it an ideal choice for a wide range of applications.

Key Features

  • Low On-Resistance: The ZXM62P03GTA boasts an exceptionally low on-resistance (R<sub>DS(on)), which results in minimal power loss during operation and enhances overall efficiency.
  • High Power Dissipation: With its ability to dissipate high levels of power, this MOSFET can handle significant loads, making it suitable for demanding applications.
  • Voltage Rating: It has a drain-source voltage (V<sub>DS) of -30V, which allows for a wide range of operations in various circuit configurations.
  • Gate Threshold Voltage: The device features a low gate threshold voltage that facilitates easy drive and control of the MOSFET, ensuring smooth and reliable switching.
  • Surface Mount Package: The ZXM62P03GTA comes in a compact SOT-223 package, which is ideal for space-constrained applications while providing excellent thermal performance.

Applications

The versatility of the ZXM62P03GTA MOSFET makes it suitable for a wide array of applications, including:

  • Power management circuits
  • Load switches
  • Battery management systems
  • DC-DC converters
  • Motor control circuits

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The ZXM62P03GTA MOSFET is produced using state-of-the-art manufacturing processes and is subjected to rigorous testing to ensure optimal performance and durability for end-users.

Conclusion

The ZXM62P03GTA from Diodes Incorporated is a testament to the company's dedication to innovation and excellence in the field of semiconductor technology. Its combination of low on-resistance, high power dissipation, and compact packaging make it an excellent choice for designers looking to enhance the efficiency and performance of their electronic systems.

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