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ZXM64N02XTA

Part No ZXM64N02XTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5.4A 8-MSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1100pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 3.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MSOP
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 036922-ZXM64N02XTA
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian ZXM64N02XTA CAD Model

Description

Introducing the ZXM64N02XTA MOSFET by Diodes Incorporated

The ZXM64N02XTA from Diodes Incorporated is a high-performance, N-channel enhancement mode Field-Effect Transistor (FET) designed for a wide array of applications. This MOSFET is a testament to Diodes Incorporated's commitment to providing industry-leading semiconductor solutions that combine efficiency with reliability.

With its compact SOT23 package, the ZXM64N02XTA is optimized for space-constrained applications while still delivering robust performance. The device features a low on-resistance (R<sub>DS(on)) which enhances its overall efficiency by minimizing power losses during operation. This characteristic makes it an excellent choice for power management tasks within electronic circuits.

The ZXM64N02XTA operates at a continuous drain current (I<sub>D) of 4.1A, which allows it to handle significant current loads, making it suitable for high-density power applications. Moreover, the device boasts a maximum drain-source voltage (V<sub>DS) of 20V, providing a good safety margin for most low to medium voltage applications. Its threshold voltage (V<sub>GS(th)) is specified at a moderate level, ensuring easy drive from logic level circuits without the need for additional level-shifting components.

One of the key features of the ZXM64N02XTA is its fast switching speed, which is essential for applications that require high-frequency operation, such as switch-mode power supplies and DC-DC converters. The speed of the device not only contributes to the efficiency of the overall system but also helps in reducing electromagnetic interference (EMI), which is critical in today's densely packed electronic environments.

Designed with an extended temperature range, the ZXM64N02XTA can operate under extreme conditions, making it a reliable choice for industrial and automotive applications where temperature fluctuations are common. Its ruggedness is further enhanced by its inherent resistance to moisture and mechanical stress, ensuring a long operational lifespan even in harsh environments.

In conclusion, the ZXM64N02XTA MOSFET from Diodes Incorporated is a versatile and durable component that offers a balance of power handling, efficiency, and compactness, suitable for a variety of power switching applications. Its performance characteristics make it an ideal choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1964 $57.9380
715+ $0.1617 $115.6155
1,115+ $0.1559 $173.8285
1,530+ $0.1513 $231.4890
1,970+ $0.1467 $288.9990
2,655+ $0.1305 $346.4775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,600 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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