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ZXMHN6A07T8TA

Part No ZXMHN6A07T8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 4N-CH 60V 1.4A SM8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 4 N-Channel (H-Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.4A
Maximum Rds On at Id,Vgs 300 mOhm @ 1.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 3.2nC @ 10V
Max Input Capacitance 166pF @ 40V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SM8
Win Source Part Number 036942-ZXMHN6A07T8TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMHN6A07T8TA CAD Model

Description

Introducing the ZXMHN6A07T8TA from Diodes Incorporated

The ZXMHN6A07T8TA is a cutting-edge electronic component designed and manufactured by Diodes Incorporated, a leading global provider and manufacturer of high-quality semiconductor products. This particular device is a testament to Diodes Incorporated's commitment to innovation, reliability, and efficiency in the electronics industry.

The ZXMHN6A07T8TA is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that offers a combination of low on-resistance and high switching speeds. These characteristics make it an ideal choice for a wide range of applications, including power management, switching regulators, and motor control circuits. The component is specifically designed to handle significant power levels while maintaining a high level of performance, ensuring that your electronic devices operate smoothly and effectively.

Constructed with advanced trench technology, the ZXMHN6A07T8TA boasts impressive efficiency, which is crucial for minimizing energy loss and heat generation in power-intensive applications. Its compact size, encapsulated in a surface-mount package, allows for easy integration into various circuit designs without occupying excessive board space. This makes it particularly suitable for space-constrained applications where performance cannot be compromised.

Key features of the ZXMHN6A07T8TA include:

  • Low threshold voltage, facilitating ease of drive and efficient operation at low voltages.
  • High continuous drain current rating, providing the capability to handle high current applications.
  • Low gate charge and capacitance, contributing to faster switching performance.
  • Robust thermal performance, ensuring reliability even under high temperature operating conditions.

With its outstanding electrical characteristics and thermal performance, the ZXMHN6A07T8TA from Diodes Incorporated represents a top-tier MOSFET solution for designers looking to enhance the efficiency and reliability of their electronic systems. Whether you're working on power supplies, lighting systems, or any other power-sensitive application, the ZXMHN6A07T8TA is engineered to meet your needs and exceed your expectations.

For detailed specifications and application notes, engineers and designers are encouraged to consult the comprehensive datasheet provided by Diodes Incorporated. This will ensure the ZXMHN6A07T8TA is utilized to its full potential within your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7579 $232.0428
170+ $1.6990 $288.8300
228+ $1.5234 $347.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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