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ZXMN10A25GTA

Part No ZXMN10A25GTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 2.9A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 859pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 125 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 036952-ZXMN10A25GTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN10A25GTA CAD Model

Description

Introducing the ZXMN10A25GTA – A High-Performance MOSFET from Diodes Incorporated

The ZXMN10A25GTA is a cutting-edge N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This powerful semiconductor device is tailored for high-efficiency power management tasks in a wide range of electronic applications. The ZXMN10A25GTA stands out for its low on-resistance and high current handling capabilities, making it an ideal choice for power conversion and switching circuits.

Constructed with the latest trench MOSFET technology, the ZXMN10A25GTA provides excellent performance with a minimal footprint. The device is housed in a compact SOT-23 package, which is highly appreciated for surface-mounted designs due to its space-saving attributes. This makes the ZXMN10A25GTA perfect for densely packed PCBs where real estate is at a premium.

Key Features:

  • Low On-Resistance (RDS(on)): The device boasts an impressively low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Continuous Drain Current (ID): It supports a high continuous drain current, enabling it to handle higher power loads with ease.
  • High-Speed Switching: Designed for fast switching performance, the ZXMN10A25GTA is suitable for high-frequency power switching applications, contributing to efficient power conversion.
  • Thermal Performance: Thanks to its excellent thermal characteristics, the device operates reliably over a broad temperature range, ensuring stability in various operating conditions.
  • Gate Charge (QG): The MOSFET features a low gate charge, which reduces the energy required to turn the transistor on and off, further enhancing its efficiency.

The ZXMN10A25GTA is not just about raw performance; it is also designed with reliability in mind. It includes integrated protection features such as over-temperature and over-current safeguards, ensuring a long operational lifespan and robustness in the face of challenging electrical environments.

Whether you're designing power supplies, DC-DC converters, motor drives, or any application requiring efficient power control, the ZXMN10A25GTA from Diodes Incorporated represents a smart choice that combines performance, efficiency, and compactness. Its advanced specifications and reliable operation make it a go-to component for engineers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0603 $53.0150
115+ $0.8700 $100.0500
180+ $0.8429 $151.7220
250+ $0.8157 $203.9250
320+ $0.7885 $252.3200
425+ $0.7069 $300.4325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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