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ZXMN2B01FTA

Part No ZXMN2B01FTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.1A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.8nC @ 4.5V
Max Input Capacitance 370pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 036960-ZXMN2B01FTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN2B01FTA CAD Model

Description

Introducing the ZXMN2B01FTA MOSFET from Diodes Incorporated

Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets, presents the ZXMN2B01FTA, a high-performance, energy-efficient N-Channel enhancement mode Field Effect Transistor (MOSFET).

The ZXMN2B01FTA is designed to deliver optimal performance with a focus on low on-resistance and high switching speed, making it an excellent choice for a variety of power management and switching applications. This MOSFET is part of Diodes Incorporated's extensive portfolio of semiconductor solutions, engineered to provide reliable and efficient performance for modern electronic devices.

Key Features of ZXMN2B01FTA

  • Low On-Resistance: With its low on-resistance, the ZXMN2B01FTA ensures minimal power loss and heat generation, which is crucial for maintaining the efficiency of the device it's implemented in.
  • High-Speed Switching: The device is capable of high-speed switching operations, which is beneficial for applications requiring fast response times and efficient power regulation.
  • Advanced Packaging: Housed in a compact SOT-23 package, the ZXMN2B01FTA saves valuable board space while still providing the robust performance expected from larger components.
  • Improved Power Density: The MOSFET's design focuses on maximizing power density, which is essential for applications with limited space but requiring high power capabilities.
  • Versatile Application Range: Suitable for a wide range of applications, including load switch, power management, and converter circuits in consumer electronics, computing devices, and portable equipment.

Applications

The ZXMN2B01FTA is ideal for integration into various electronic systems due to its versatile nature. Common applications include:

  • Power supply circuits
  • DC-DC converters
  • Motor control units
  • Battery management systems
  • LED lighting solutions
  • High-efficiency power management designs

With its combination of low on-resistance, high-speed switching, and a compact form factor, the ZXMN2B01FTA from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management and switching solutions. Its reliability and efficiency make it a valuable component in any electronic system requiring a high-quality N-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2933 $51.3275
420+ $0.2407 $101.0940
645+ $0.2331 $150.3495
890+ $0.2256 $200.7840
1,150+ $0.2181 $250.8150
1,535+ $0.1955 $300.0925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,834 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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