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ZXMN2F34MATA

Part No ZXMN2F34MATA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4A DFN-2X2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 2.8nC @ 4.5V
Max Input Capacitance 277pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.35W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-DFN (2x2)
Dimension 3-VDFN Exposed Pad
Win Source Part Number 118389-ZXMN2F34MATA
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN2F34MATA CAD Model

Description

Introducing the ZXMN2F34MATA - A High-Efficiency MOSFET from Diodes Incorporated

The ZXMN2F34MATA is a cutting-edge, high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) brought to you by Diodes Incorporated. This device is an exemplary choice for power management tasks in a wide array of electronic applications, thanks to its impressive efficiency and thermal performance.

Constructed with the latest MOSFET technology, the ZXMN2F34MATA boasts a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and enhanced power efficiency. This feature is particularly beneficial in applications where power conservation is crucial, such as in portable devices and power supplies.

The ZXMN2F34MATA operates at a maximum continuous drain current of several amperes, making it suitable for handling moderate power loads. Its compact package design does not compromise on power handling, ensuring that it can be integrated into space-constrained designs without sacrificing performance.

Key Features:

  • Low on-resistance (R<sub>DS(on)) for improved power efficiency
  • High continuous drain current capability
  • Fast switching speeds to support high-frequency applications
  • Enhanced thermal performance for reliability in extended operation
  • Compact package suitable for space-constrained applications

With its fast switching speeds, the ZXMN2F34MATA is also an excellent choice for high-frequency circuit designs, including switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits. The swift response time ensures minimal switching losses, further boosting the overall efficiency of the system.

Reliability is a hallmark of the ZXMN2F34MATA, as it is designed to operate over a broad temperature range. The enhanced thermal performance ensures that the device remains functional and reliable even under strenuous conditions, making it a dependable component for industrial and automotive applications that demand consistency and longevity.

In summary, Diodes Incorporated's ZXMN2F34MATA MOSFET is an outstanding solution for designers looking to optimize their power management systems. Its blend of efficiency, speed, and reliability, all packed into a compact footprint, makes it a versatile and valuable component in modern electronic design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1240 $63.7200
70+ $1.7429 $122.0030
105+ $1.6886 $177.3030
145+ $1.6343 $236.9735
185+ $1.5800 $292.3000
245+ $1.4160 $346.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,200 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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