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ZXMN4A06KTC

Part No ZXMN4A06KTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 7.2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17.1nC @ 10V
Max Input Capacitance 827pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.15W (Ta)
Maximum Rds On at Id,Vgs 50 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 036973-ZXMN4A06KTC
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN4A06KTC CAD Model

Description

Introducing the ZXMN4A06KTC MOSFET by Diodes Incorporated

Diodes Incorporated presents the ZXMN4A06KTC, a high-performance, energy-efficient N-channel enhancement mode Field Effect Transistor (MOSFET) designed for a vast range of applications. This MOSFET is a part of Diodes Incorporated's extensive portfolio of semiconductor solutions, renowned for their reliability and innovation.

The ZXMN4A06KTC is built on a robust and advanced trench MOSFET technology, providing superior on-state resistance (R<sub>DS(on)) and improved thermal performance. This makes it an excellent choice for power management tasks where efficiency is paramount. With a compact and surface-mountable package, this MOSFET is ideal for space-constrained applications, offering a seamless integration into various circuit designs.

Key Features of the ZXMN4A06KTC:

  • Low On-Resistance: The device boasts an exceptionally low R<sub>DS(on), minimizing conduction losses and enhancing overall efficiency.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), providing robust performance for high-power applications.
  • High Thermal Performance: With an excellent thermal dissipation capability, the ZXMN4A06KTC ensures reliable operation even under high-temperature conditions.
  • Fast Switching Speed: The MOSFET is designed for fast switching, reducing switching losses and improving performance in high-frequency applications.
  • Gate Charge Optimization: The device features optimized gate charge (Q<sub>G), which contributes to reduced power dissipation during switching.

The ZXMN4A06KTC is versatile and can be employed in a broad spectrum of applications, including DC-DC converters, power supplies, motor drives, and load switches. Its robustness and efficiency make it suitable for both industrial and consumer electronics markets.

With Diodes Incorporated's commitment to quality, the ZXMN4A06KTC MOSFET is manufactured to the highest standards, ensuring reliable performance and longevity. Whether you're designing for efficiency, power density, or thermal management, the ZXMN4A06KTC is an excellent choice to meet your circuit design requirements.

For detailed specifications and application support, visit the Diodes Incorporated website to download the full datasheet and to explore additional resources for the ZXMN4A06KTC MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4302 $51.6240
285+ $0.3530 $100.6050
440+ $0.3420 $150.4800
605+ $0.3310 $200.2550
785+ $0.3199 $251.1215
1,050+ $0.2868 $301.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,911 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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