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ZXMN6A07FTC

Part No ZXMN6A07FTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 1.2A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 3.2nC @ 10V
Max Input Capacitance 166pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 1.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1120399-ZXMN6A07FTC
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN6A07FTC CAD Model

Description

Introducing the ZXMN6A07FTC from Diodes Incorporated

The ZXMN6A07FTC is a high-performance, N-channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient and compact solutions for a wide range of electronic applications.

With its small footprint, the ZXMN6A07FTC is housed in a SuperSOT-6 package, which not only ensures a space-saving design but also offers excellent thermal performance. This makes the ZXMN6A07FTC an ideal choice for power management tasks in space-constrained environments.

Key Features of the ZXMN6A07FTC:

  • Low On-Resistance: The device features a low on-resistance of typically 30 mΩ at V<sub>GS = 10V, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Continuous Drain Current: It can handle a continuous drain current of up to 6A, making it suitable for handling high current loads.
  • High Thermal Performance: The SuperSOT-6 package is designed to offer superior thermal performance, ensuring reliability even under high power and temperature conditions.
  • Gate Charge: The device has been optimized for low gate charge, which minimizes switching losses and enhances AC performance.
  • Breakdown Voltage: With a breakdown voltage of 60V, the ZXMN6A07FTC is capable of withstanding high voltage conditions, providing a margin of safety for various applications.

Applications:

The ZXMN6A07FTC is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power management circuits
  • Motor control systems
  • Load switches
  • Battery management systems
  • Computing and telecommunications

Whether you're designing for consumer electronics, automotive systems, or industrial controls, the ZXMN6A07FTC offers a robust solution with its combination of efficiency, thermal management, and compact size. Diodes Incorporated ensures that this MOSFET meets the highest quality and performance standards, making it a reliable component for your next project.

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