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ZXMN6A09DN8TA

Part No ZXMN6A09DN8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 4.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 40 mOhm @ 8.2A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24.2nC @ 5V
Max Input Capacitance 1407pF @ 40V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 108085-ZXMN6A09DN8TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMN6A09DN8TA CAD Model

Description

Introducing the ZXMN6A09DN8TA MOSFET from Diodes Incorporated

The ZXMN6A09DN8TA is a high-performance, dual N-Channel enhancement mode field-effect transistor (MOSFET) designed by the renowned semiconductor manufacturer, Diodes Incorporated. This power MOSFET is engineered to deliver efficient power management and signal processing in a wide range of electronic applications. Its compact form factor and robust design make it an ideal choice for space-constrained and power-sensitive designs.

With its dual N-Channel configuration, the ZXMN6A09DN8TA offers a versatile solution for applications requiring complementary drive or half-bridge topologies. This MOSFET is built using advanced trench MOSFET technology, which provides superior on-resistance and minimizes gate charge, resulting in a highly efficient device with excellent thermal performance.

The ZXMN6A09DN8TA boasts a low threshold voltage, ensuring it can be driven by low-voltage logic signals, making it compatible with modern microcontrollers and digital ICs. This feature simplifies the design process and allows for seamless integration into various circuits without the need for additional level-shifting components.

Key specifications of the ZXMN6A09DN8TA include:

  • Continuous Drain Current (ID): Up to 4.2A
  • Drain-Source Voltage (VDSS): 60V
  • RDS(on) Max @ VGS=10V: 70mΩ
  • Gate Threshold Voltage (VGS(th)): 2.1V
  • Power Dissipation (PD): 1.25W
  • Package: SO-8

This MOSFET is packaged in a small-outline SO-8 package, which offers a small footprint on PCBs and is suitable for automated assembly processes. The ZXMN6A09DN8TA is designed to handle significant power levels while maintaining a low thermal footprint, thanks to its excellent thermal management properties.

Applications for the ZXMN6A09DN8TA include, but are not limited to, power supplies, DC-DC converters, motor control circuits, and high-efficiency power management systems. Its reliability and performance make it a go-to component for designers looking to optimize their power circuitry in both commercial and industrial products.

Overall, the ZXMN6A09DN8TA from Diodes Incorporated represents a blend of efficiency, versatility, and reliability, making it a valuable addition to any power management or signal processing application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7383 $51.6810
170+ $0.6058 $102.9860
260+ $0.5869 $152.5940
355+ $0.5680 $201.6400
460+ $0.5490 $252.5400
610+ $0.4922 $300.2420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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