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ZXMNS3BM832TA

Part No ZXMNS3BM832TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2A 8-MLP / Trans MOSFET N-CH 30V 2A 8-Pin MLP832 T/R
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 700mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 2.9nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 314pF @ 15V
Vgs (Maximum) ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Maximum) 1W (Ta)
Rds On (Maximum) @ Id, Vgs 180 mOhm @ 1.5A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-MLP, MicroFET (3x2)
Package 8-VDFN Exposed Pad
Win Source Part Number 800447-ZXMNS3BM832TA
Popularity Medium
Supply and Demand Status Limited
Family Name ZXMNS3BM832
Introduction Date April 04, 2005
ECCN EAR99
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian ZXMNS3BM832TA CAD Model

Description

Introducing the ZXMNS3BM832TA - A High-Efficiency MOSFET from Diodes Incorporated

The ZXMNS3BM832TA is a cutting-edge N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global provider of high-quality semiconductor products. This MOSFET is a testament to Diodes Incorporated's commitment to offering energy-efficient solutions for a wide range of electronic applications.

Constructed with advanced trench technology, the ZXMNS3BM832TA exhibits low on-resistance and fast switching performance, which makes it an ideal choice for power management tasks. Its compact SOT23 package is designed to take up minimal space on a PCB, while still providing robust thermal performance and power handling capabilities.

Key Features of the ZXMNS3BM832TA:

  • Low On-Resistance: The device features exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High-Speed Switching: Fast switching characteristics ensure that the MOSFET can handle high-frequency operations with ease, making it suitable for modern electronic circuits that require quick response times.
  • Low Threshold Voltage: A low gate threshold voltage allows for the device to be driven at lower voltages, which can be beneficial in battery-operated devices where power conservation is critical.
  • High Power Dissipation: The ZXMNS3BM832TA is capable of dissipating high levels of power, ensuring reliable operation even under strenuous conditions.
  • RoHS Compliant: This product complies with the RoHS directive, making it environmentally friendly and suitable for use in various international markets.

Applications:

The ZXMNS3BM832TA is versatile and can be used in a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Load switches
  • Battery management systems

Whether you are designing a sophisticated power management system or looking for a reliable component for your load-switching applications, the ZXMNS3BM832TA from Diodes Incorporated is an excellent choice that promises performance, efficiency, and reliability.

For detailed specifications and application support, visit the Diodes Incorporated website or contact their technical support team for assistance in integrating the ZXMNS3BM832TA into your next project.

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