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ZXMP3A17DN8TA

Part No ZXMP3A17DN8TA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3.4A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 70 mOhm @ 3.2A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 15.8nC @ 10V
Max Input Capacitance 630pF @ 15V
Maximum Power Dissipation 1.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 119355-ZXMP3A17DN8TA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP3A17DN8TA CAD Model

Description

Product Overview: ZXMP3A17DN8TA - Diodes Incorporated

The ZXMP3A17DN8TA is a high-performance, P-channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and is ideal for a wide range of applications, including load switch, power management, and various other circuits where a high-side switch is required.

Key Features

  • Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency, making it suitable for power-intensive applications.
  • High Power Dissipation: With a power dissipation of up to 1.4W, the ZXMP3A17DN8TA can handle significant power, ensuring reliable operation under varying conditions.
  • High Threshold Voltage: The MOSFET is characterized by a high threshold voltage, ensuring that it remains off under small voltage fluctuations, thus preventing unintentional turn-ons.
  • Advanced Packaging: It is available in a compact, surface-mount SOT-223 package, providing a space-saving solution for PCB designs and enhancing thermal performance.

Electrical Characteristics

  • Drain-Source Voltage (V<sub>DS): -30V
  • Gate-Source Voltage (V<sub>GS): ±20V
  • Continuous Drain Current (I<sub>D): -3.1A
  • Pulsed Drain Current (I<sub>DM): -12A
  • Maximum R<sub>DS(on): 70mΩ at V<sub>GS = -10V

Applications

Due to its robustness and efficiency, the ZXMP3A17DN8TA is well-suited for a variety of applications, including:

  • Power management for portable devices
  • Battery-powered systems
  • DC/DC converters
  • Load switching
  • Motor control circuits

The ZXMP3A17DN8TA from Diodes Incorporated represents a blend of reliability, efficiency, and performance, making it an excellent choice for designers looking to optimize their power management solutions. Its advanced features and specifications are tailored to meet the demands of modern electronic devices and systems, ensuring a high level of performance and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0113 $50.5650
125+ $0.8298 $103.7250
190+ $0.8039 $152.7410
260+ $0.7779 $202.2540
335+ $0.7520 $251.9200
445+ $0.6742 $300.0190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,793 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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