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ZXMP6A17E6QTA

Part No ZXMP6A17E6QTA
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 3A SOT-23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17.7nC @ 10V
Max Input Capacitance 637pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 125 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 1120409-ZXMP6A17E6QTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXMP6A17E6QTA CAD Model

Description

Introducing the ZXMP6A17E6QTA P-Channel MOSFET from Diodes Incorporated

The ZXMP6A17E6QTA is a high-performance, P-Channel MOSFET designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is an excellent choice for power management applications, thanks to its low on-resistance and high efficiency. It's particularly suitable for portable electronics, where power conservation is crucial, as well as for load switch and battery protection circuits.

Key Features:

  • Low On-Resistance: The device features an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced power losses during operation, enhancing overall efficiency and reliability.
  • High Power Dissipation: With its ability to dissipate high levels of power, the ZXMP6A17E6QTA is capable of handling significant current loads, making it ideal for demanding applications.
  • Advanced Packaging: Encased in a compact SOT-23 package, this MOSFET is optimized for space-constrained applications, without compromising on performance.
  • Voltage Ratings: It can handle a drain-source voltage (V<sub>DSS) up to -60V, and a continuous drain current (I<sub>D) of -1.2A, making it robust for various circuit designs.
  • Thermal Management: The ZXMP6A17E6QTA is designed with superior thermal performance in mind, ensuring stability and longevity even under high temperature operating conditions.

Applications:

The versatility of the ZXMP6A17E6QTA allows it to be used in a wide array of applications, including but not limited to:

  • Power management for portable devices such as smartphones, tablets, and laptops
  • DC/DC converters
  • Battery management systems
  • Load switches
  • Reverse polarity protection circuits

Diodes Incorporated's commitment to quality ensures that the ZXMP6A17E6QTA MOSFET meets the stringent requirements of modern electronic devices. With its combination of low on-resistance, high power dissipation, and compact form factor, this component is an essential building block for efficient and reliable circuit design.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to consult the official datasheet and technical documentation provided by Diodes Incorporated.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2829 $50.9220
380+ $0.2650 $100.7000
590+ $0.2561 $151.0990
840+ $0.2382 $200.0880
1,095+ $0.2292 $250.9740
1,365+ $0.2203 $300.7095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 169,910 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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