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ZXTP2012ASTOA

Part No ZXTP2012ASTOA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 3.5A TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 3.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 210mV @ 400mA, 4A
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 1V
Maximum Power Dissipation 1W
Frequency - Transition 120MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package E-Line (TO-92 compatible)
Win Source Part Number 1120455-ZXTP2012ASTOA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZXTP2012ASTOA CAD Model

Description

Introducing the ZXTP2012ASTOA PNP Transistor

The ZXTP2012ASTOA is a high-performance PNP transistor developed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This device is designed for applications requiring low power loss and high efficiency, making it an ideal choice for power management tasks within electronic circuits.

Key Features

  • High Current Capability: The ZXTP2012ASTOA can handle continuous collector currents up to -20 A, allowing for robust performance in demanding situations.
  • Low Saturation Voltage: With a typical collector-emitter saturation voltage of -20 mV at -10 A, this transistor ensures efficient operation and minimal power dissipation.
  • High Power Dissipation: The device is capable of dissipating up to 2 W of power, providing reliable operation even under high load conditions.
  • High Maximum Operating Temperature: The transistor can operate at temperatures up to 150°C, making it suitable for use in thermally challenging environments.

Electrical Characteristics

The ZXTP2012ASTOA features excellent hFE characteristics, with a minimum hFE of 100 at -2 A, ensuring consistent gain performance across a range of operating conditions. The device also has a collector-base voltage (VCBO) of -80 V and a collector-emitter voltage (VCEO) of -60 V, providing a good safety margin for a variety of applications.

Package and Applications

Enclosed in a SOT89 package, the ZXTP2012ASTOA offers a compact footprint suitable for space-constrained applications. Its robust design and electrical performance make it suitable for a wide range of applications, including:

  • Power management circuits
  • DC-DC converters
  • Motor control circuits
  • Linear regulators
  • Switching regulators

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The ZXTP2012ASTOA is manufactured to stringent quality standards, ensuring reliability and performance consistency. It is RoHS compliant, reflecting the company's dedication to environmental responsibility.

In summary, the ZXTP2012ASTOA from Diodes Incorporated is a versatile and efficient PNP transistor that offers superior performance for a variety of power management applications. Its robust design, high current carrying capability, and low power loss make it a top choice for designers looking to optimize their electronic designs.

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