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Same model may have multiple batches, images only for reference.
DI110N04PQ-AQ Real Image
Same model may have multiple batches, images only for reference.

DI110N04PQ-AQ

Part No DI110N04PQ-AQ
Manufacturer DIOTEC Electronics Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, POWERQFN 5X6, 40V, 110A, / N-Channel 40 V 110A (Tc) 45W (Tc) Surface Mount 8-QFN (5x6)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diotec Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-QFN (5x6)
Package / Case 8-PowerTDFN
Base Product Number DI110N04
Standard Package 5,000
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
HTSUS 8541.21.0000
Win Source Part Number 1349244-DI110N04PQ-AQ
Ultra Librarian 3D Model Ultra Librarian DI110N04PQ-AQ CAD Model

Description

The 1349244-DI110N04PQ-AQ is a MOSFET (Metal Oxide) N-Channel FET with a drain to source voltage (Vdss) of 40V and a power dissipation of 45W (Tc).

  • Vdss: 40V
  • Power Dissipation: 45W (Tc)
  • Mounting Type: Surface Mount
  • Package/Case: 8-PowerTDFN
  • Supplier Device Package: 8-QFN (5x6)
  • FET Type: Single FET
  • FET Feature: MOSFET
  • Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drive Voltage: 4.5V, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
  • Series: Automotive, AEC-Q101
  • Packaging: Tape and Reel

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